A normally-off microcontroller unit with an 85% power overhead reduction based on crystalline indium gallium zinc oxide field effect transistors

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EE02 ◽  
Author(s):  
Kazuaki Ohshima ◽  
Hidetomo Kobayashi ◽  
Tatsuji Nishijima ◽  
Seiichi Yoneda ◽  
Hiroyuki Tomatsu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium ◽  
Microcontroller Unit

Properties ofc-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EG09 ◽  
Author(s):  
Yoshinobu Asami ◽  
Motomu Kurata ◽  
Yutaka Okazaki ◽  
Eiji Higa ◽  
Daisuke Matsubayashi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium

scholarly journals Microwave-assisted calcination of electrospun indium–gallium–zinc oxide nanofibers for high-performance field-effect transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (63) ◽  
pp. 38351-38356
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Mechanical Properties ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Microwave Assisted ◽  
Indium Gallium ◽  
Optical And Mechanical Properties

We report a systematic study on the microstructure and optical and mechanical properties of IGZO nanofibers for high performance field-effect transistors (FETs), as well as the effects of microwave-assisted calcination on the electrical properties and instability of FETs.

UV Sensitive Indium Gallium Zinc Oxide MOS- FET Fabricated by RF Magnetron Sputtering Method

2013 ◽  
Vol 771 ◽  
pp. 67-70
Author(s):  
Jun Dai ◽  
Yi Jie Fan ◽  
Qiang Sun
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Field Effect Transistors ◽  
Uv Light ◽  
Rf Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Indium Gallium Zinc Oxide ◽  
X Ray ◽  
Indium Gallium

Transparent indium gallium zinc oxide (IGZO) thin film was fabricated on SiO2/Si substrate by radio-frequency magnetron sputtering method. The IGZO thin film was characterized by X-ray diffraction, UV-VIS spectrometer, X-ray photoelectron energy spectrum to determine its optical, structural properties and binding energy information. The IGZO thin film was employed to construct metal-oxide-semiconductor field effect transistors (MOS-FET), which showed an on/off current of about 103. When the device was illuminated by UV light, the drain-to-source current was increased by 15 folders at -5 V gate voltages. The result indicates that the IGZO MOS-FET is sensitive to UV light.

Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer

2012 ◽  
Vol 24 (26) ◽  
pp. 3509-3514 ◽  
Author(s):  
Hsiao-Wen Zan ◽  
Chun-Cheng Yeh ◽  
Hsin-Fei Meng ◽  
Chuang-Chuang Tsai ◽  
Liang-Hao Chen
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Field ◽  
Indium Gallium Zinc Oxide ◽  
Field Effect Mobility ◽  
Strong Reduction ◽  
Indium Gallium

Indium Gallium Zinc Oxide FinFET Compared with Silicon FinFET

2021 ◽  
Vol 68 ◽  
pp. 103-113
Author(s):  
Unopa Matebesi ◽  
Nonofo M.J. Ditshego
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Indium Gallium Zinc Oxide ◽  
Best Value ◽  
Effect Transistor ◽  
Indium Gallium ◽  
Silicon Device ◽  
Better Than

Indium gallium zinc oxide fin-field effect transistor (IGZO FinFET) characteristics are investigated and then compared with Zinc oxide fin-field effect transistor (ZnO FinFET) and the Silicon fin-field effect transistor (Si FinFET). This was done using 3D simulation. The threshold voltage for Si, ZnO, and IGZO is 0.75 V, 0.30 V and 0.05 V respectively. The silicon device has the highest transconductance (5.0 x 10-7 S) and performs better than the other devices because it has less fixed charge defects. IGZO has the second-best value of Gm (3.6 x 10-7 S), ZnO has the least value of Gm (3.4 x 10-7 S). Si device has the least drain current (IDS) value of 2.0 x 10-7 A, ZnO device has a better IDS value of 6.2 x 10-6 A while IGZO device has the best IDS value of 1.6 x 10-5 A. IGZO is better than Si by two (2) order magnitude. The field effect mobility is 50.0 cm2/Vs for all three devices.

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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