Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer

2012 ◽  
Vol 24 (26) ◽  
pp. 3509-3514 ◽  
Author(s):  
Hsiao-Wen Zan ◽  
Chun-Cheng Yeh ◽  
Hsin-Fei Meng ◽  
Chuang-Chuang Tsai ◽  
Liang-Hao Chen
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Field ◽  
Indium Gallium Zinc Oxide ◽  
Field Effect Mobility ◽  
Strong Reduction ◽  
Indium Gallium

Properties ofc-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EG09 ◽  
Author(s):  
Yoshinobu Asami ◽  
Motomu Kurata ◽  
Yutaka Okazaki ◽  
Eiji Higa ◽  
Daisuke Matsubayashi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium

scholarly journals Microwave-assisted calcination of electrospun indium–gallium–zinc oxide nanofibers for high-performance field-effect transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (63) ◽  
pp. 38351-38356
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Mechanical Properties ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Microwave Assisted ◽  
Indium Gallium ◽  
Optical And Mechanical Properties

We report a systematic study on the microstructure and optical and mechanical properties of IGZO nanofibers for high performance field-effect transistors (FETs), as well as the effects of microwave-assisted calcination on the electrical properties and instability of FETs.

A normally-off microcontroller unit with an 85% power overhead reduction based on crystalline indium gallium zinc oxide field effect transistors

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EE02 ◽  
Author(s):  
Kazuaki Ohshima ◽  
Hidetomo Kobayashi ◽  
Tatsuji Nishijima ◽  
Seiichi Yoneda ◽  
Hiroyuki Tomatsu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium ◽  
Microcontroller Unit

High field-effect mobility zinc oxide thin film transistors produced at room temperature

2004 ◽  
Vol 338-340 ◽  
pp. 806-809 ◽  
Author(s):  
E. Fortunato ◽  
A. Pimentel ◽  
L. Pereira ◽  
A. Gonçalves ◽  
G. Lavareda ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Field ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Field Effect Mobility ◽  
Zinc Oxide Thin Film
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