scholarly journals Electroluminescence from silicon-based light-emitting device with erbium-doped TiO2 films: Enhancement effect of ytterbium codoping

2019 ◽  
Vol 68 (12) ◽  
pp. 124204
Author(s):  
Wei-Jun Zhu ◽  
Jin-Xin Chen ◽  
Yu-Han Gao ◽  
De-Ren Yang ◽  
Xiang-Yang Ma
Keyword(s):  
Enhancement Effect ◽  
Light Emitting ◽  
Erbium Doped ◽  
Silicon Based

scholarly journals Electroluminescence from light-emitting devices based on erbium-doped ZnO/n-Si heterostructures: Enhancement effect of fluorine co-doping

2019 ◽  
Vol 27 (21) ◽  
pp. 30919 ◽  
Author(s):  
Jinxin Chen ◽  
Weijun Zhu ◽  
Yuhan Gao ◽  
Deren Yang ◽  
Xiangyang Ma
Keyword(s):  
Enhancement Effect ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Co Doping ◽  
Erbium Doped ◽  
Doped Zno

scholarly journals Electroluminescence from light-emitting devices with erbium-doped TiO2 films: Enhancement effect of yttrium codoping

2016 ◽  
Vol 120 (16) ◽  
pp. 163104 ◽  
Author(s):  
Miaomiao Jiang ◽  
Chen Zhu ◽  
Junwei Zhou ◽  
Jinxin Chen ◽  
Yuhan Gao ◽  
...  
Keyword(s):  
Enhancement Effect ◽  
Tio2 Films ◽  
Light Emitting ◽  
Doped Tio2 ◽  
Light Emitting Devices ◽  
Erbium Doped

Electroluminescence from silicon-based light-emitting devices with erbium-doped TiO2 films annealed at different temperatures

2017 ◽  
Vol 122 (16) ◽  
pp. 163106 ◽  
Author(s):  
Jinxin Chen ◽  
Zhifei Gao ◽  
Miaomiao Jiang ◽  
Yuhan Gao ◽  
Xiangyang Ma ◽  
...  
Keyword(s):  
Tio2 Films ◽  
Light Emitting ◽  
Doped Tio2 ◽  
Light Emitting Devices ◽  
Erbium Doped ◽  
Different Temperatures ◽  
Silicon Based

Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 [micro sign]m

1988 ◽  
Vol 24 (12) ◽  
pp. 740 ◽  
Author(s):  
P.S. Whitney ◽  
K. Uwai ◽  
H. Nakagome ◽  
K. Takahei
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

Silicon-based light-emitting materials: implanted SiO2 films and wide-bandgap a-Si:H

2001 ◽  
Author(s):  
Ivan Pelant ◽  
Katerina Luterova ◽  
Petr Fojtik ◽  
Jean-Luc Rehspringer ◽  
Dominique Muller ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Light Emitting ◽  
Sio2 Films ◽  
Silicon Based

Visible Light Emission from Erbium Doped Yttria Stabilized Zirconia

2003 ◽  
Vol 789 ◽  
Author(s):  
Michael Cross ◽  
Walter Varhue
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Green Light ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Rare Earth Ion ◽  
Device Structure ◽  
Insulating Layer ◽  
Light Emitting ◽  
Erbium Doped

ABSTRACT: One of the major shortcomings of silicon (Si) as a semiconductor material is its inability to yield efficient light emission. There has been a continued interest in adding rare earth ion impurities such as erbium (Er) to the Si lattice to act as light emitting centers. The low band gap of Si however has complicated this practice by quenching and absorbing this possible emission. Increasing the band gap of the host has been successfully tried in the case of gallium nitride (GaN) [1] and Si-rich oxide (SRO) [2] alloys. A similar approach has been tried here, where Er oxide (ErOx) nanocrystals have been formed in a yttria stabilized zirconia (YSZ) host deposited on a Si (100) substrate. The YSZ is deposited as a heteroepitaxial, insulating layer on the Si substrate by a reactive sputtering technique. The Er is also incorporated by a sputtering process from a metallic target and its placement in the YSZ host can be easily controlled. The device structure formed is a simple metal contact/insulator/phosphor sandwich. The device has been found to emit visible green light at low bias voltages. The advantage of this material is that it is much more structured than SiO2 which can theoretically lead to higher emission intensity.

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

Investigation of silicon-based light emitting diode sub-mounts: Enhanced performance and potential for improved reliability

2015 ◽  
Vol 31 ◽  
pp. 604-610 ◽  
Author(s):  
Shih-Chieh Tseng ◽  
Chao-Wei Tang ◽  
Hsueh-Chuan Liao ◽  
Kuan-Ming Li ◽  
Hong-Tsu Young
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Silicon Based

Ge/Si self-assembled islands integrated in 2D photonic crystals microcavities for realisation of silicon-based light-emitting devices

2004 ◽  
Author(s):  
Sylvain David ◽  
Moustapha El Kurdi ◽  
Philippe Boucaud ◽  
Cecile Kammerer ◽  
Xiang Li ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Self Assembled ◽  
Silicon Based
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