scholarly journals Electroluminescence from light-emitting devices with erbium-doped TiO2 films: Enhancement effect of yttrium codoping

2016 ◽  
Vol 120 (16) ◽  
pp. 163104 ◽  
Author(s):  
Miaomiao Jiang ◽  
Chen Zhu ◽  
Junwei Zhou ◽  
Jinxin Chen ◽  
Yuhan Gao ◽  
...  
Keyword(s):  
Enhancement Effect ◽  
Tio2 Films ◽  
Light Emitting ◽  
Doped Tio2 ◽  
Light Emitting Devices ◽  
Erbium Doped

Electroluminescence from silicon-based light-emitting devices with erbium-doped TiO2 films annealed at different temperatures

2017 ◽  
Vol 122 (16) ◽  
pp. 163106 ◽  
Author(s):  
Jinxin Chen ◽  
Zhifei Gao ◽  
Miaomiao Jiang ◽  
Yuhan Gao ◽  
Xiangyang Ma ◽  
...  
Keyword(s):  
Tio2 Films ◽  
Light Emitting ◽  
Doped Tio2 ◽  
Light Emitting Devices ◽  
Erbium Doped ◽  
Different Temperatures ◽  
Silicon Based

scholarly journals Electroluminescence from light-emitting devices based on erbium-doped ZnO/n-Si heterostructures: Enhancement effect of fluorine co-doping

2019 ◽  
Vol 27 (21) ◽  
pp. 30919 ◽  
Author(s):  
Jinxin Chen ◽  
Weijun Zhu ◽  
Yuhan Gao ◽  
Deren Yang ◽  
Xiangyang Ma
Keyword(s):  
Enhancement Effect ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Co Doping ◽  
Erbium Doped ◽  
Doped Zno

Light-emitting devices based on erbium-doped TiO2/p+-Si heterostructures: Engineering of electroluminescence via aluminum co-doping

2013 ◽  
Vol 102 (2) ◽  
pp. 021108 ◽  
Author(s):  
Yang Yang ◽  
Yunpeng Li ◽  
Lu Jin ◽  
Xiangyang Ma ◽  
Deren Yang
Keyword(s):  
Light Emitting ◽  
Doped Tio2 ◽  
Light Emitting Devices ◽  
Co Doping ◽  
Erbium Doped

Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO2 films

2015 ◽  
Vol 107 (13) ◽  
pp. 131103 ◽  
Author(s):  
Chen Zhu ◽  
Chunyan Lv ◽  
Zhifei Gao ◽  
Canxing Wang ◽  
Dongsheng Li ◽  
...  
Keyword(s):  
Rare Earth ◽  
Near Infrared ◽  
Tio2 Films ◽  
Light Emitting ◽  
Doped Tio2 ◽  
Light Emitting Devices ◽  
Rare Earth Doped

Structural, optical, and photoluminescence properties of erbium doped TiO2 films

Vacuum ◽  
2019 ◽  
Vol 169 ◽  
pp. 108873 ◽  
Author(s):  
J.A. Borrego Pérez ◽  
Maykel Courel ◽  
Rocío Castañeda Valderrama ◽  
I. Hernández ◽  
Mou Pal ◽  
...  
Keyword(s):  
Tio2 Films ◽  
Photoluminescence Properties ◽  
Doped Tio2 ◽  
Erbium Doped

scholarly journals Electroluminescence from silicon-based light-emitting device with erbium-doped TiO2 films: Enhancement effect of ytterbium codoping

2019 ◽  
Vol 68 (12) ◽  
pp. 124204
Author(s):  
Wei-Jun Zhu ◽  
Jin-Xin Chen ◽  
Yu-Han Gao ◽  
De-Ren Yang ◽  
Xiang-Yang Ma
Keyword(s):  
Enhancement Effect ◽  
Light Emitting ◽  
Erbium Doped ◽  
Silicon Based

Si-based erbium-doped light-emitting devices

2006 ◽  
Vol 121 (2) ◽  
pp. 187-192 ◽  
Author(s):  
Maria Eloisa Castagna ◽  
Anna Muscará ◽  
Salvatore Leonardi ◽  
Salvatore Coffa ◽  
Liliana Caristia ◽  
...  
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Erbium Doped

Erbium Doped Silicon for Light Emitting Devices

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Michel ◽  
B. Zheng ◽  
J. Palm ◽  
E. Ouellette ◽  
F. Gan ◽  
...  
Keyword(s):  
System Performance ◽  
Optical Transmission ◽  
Cmos Technology ◽  
Transmission System ◽  
Auger Process ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Excitation Processes

AbstractWe report on the excitation and de-excitation processes of erbium implanted in silicon and the integration of Si:Er light emitting devices (LED) with standard CMOS technology. We find two deexcitation processes, an Auger process below 100 K and a phonon mediated energy backtransfer above 100 K. We present the first optical voice link with a silicon LED as the emitter. Optical transmission system performance with our LED is possible below 200 K.

Erbium-doped silicon light-emitting devices

1998 ◽  
Author(s):  
Thomas D. Chen ◽  
Anuradha Agarwal ◽  
Laura M. Giovane ◽  
James S. Foresi ◽  
Ling Liao ◽  
...  
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Erbium Doped ◽  
Doped Silicon
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