Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 [micro sign]m

1988 ◽  
Vol 24 (12) ◽  
pp. 740 ◽  
Author(s):  
P.S. Whitney ◽  
K. Uwai ◽  
H. Nakagome ◽  
K. Takahei
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

Erbium-doped Si1-xGex/Si structures for light emitting diodes

2000 ◽  
Vol 15 (2) ◽  
pp. 91-97 ◽  
Author(s):  
A T Naveed ◽  
J H Evans-Freeman ◽  
K D Vernon-Parry ◽  
A C Wright ◽  
D C Houghton ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

scholarly journals Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

2012 ◽  
Vol 111 (6) ◽  
pp. 063102 ◽  
Author(s):  
A. Anopchenko ◽  
A. Tengattini ◽  
A. Marconi ◽  
N. Prtljaga ◽  
J. M. Ramírez ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Pulsed Excitation ◽  
Light Emitting ◽  
Erbium Doped

1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes

1998 ◽  
Vol 83 (3) ◽  
pp. 1426-1428 ◽  
Author(s):  
Shoou-Jinn Chang ◽  
Deepak K. Nayak ◽  
Yasuhiro Shiraki
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

scholarly journals Electroluminescent properties of erbium-doped III–N light-emitting diodes

2004 ◽  
Vol 84 (7) ◽  
pp. 1061-1063 ◽  
Author(s):  
J. M. Zavada ◽  
S. X. Jin ◽  
N. Nepal ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

Optimization of erbium-doped light-emitting diodes by p-type counterdoping

1999 ◽  
Vol 75 (5) ◽  
pp. 647-649 ◽  
Author(s):  
E. Neufeld ◽  
M. Markmann ◽  
A. Vörckel ◽  
K. Brunner ◽  
G. Abstreiter
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped ◽  
P Type

Current-injected 1.54μm light emitting diodes based on erbium-doped GaN

2008 ◽  
Vol 93 (3) ◽  
pp. 033502 ◽  
Author(s):  
R. Dahal ◽  
C. Ugolini ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
J. M. Zavada
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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