Silicon-based light-emitting materials: implanted SiO2 films and wide-bandgap a-Si:H

2001 ◽  
Author(s):  
Ivan Pelant ◽  
Katerina Luterova ◽  
Petr Fojtik ◽  
Jean-Luc Rehspringer ◽  
Dominique Muller ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Light Emitting ◽  
Sio2 Films ◽  
Silicon Based

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

Investigation of silicon-based light emitting diode sub-mounts: Enhanced performance and potential for improved reliability

2015 ◽  
Vol 31 ◽  
pp. 604-610 ◽  
Author(s):  
Shih-Chieh Tseng ◽  
Chao-Wei Tang ◽  
Hsueh-Chuan Liao ◽  
Kuan-Ming Li ◽  
Hong-Tsu Young
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Silicon Based

Ge/Si self-assembled islands integrated in 2D photonic crystals microcavities for realisation of silicon-based light-emitting devices

2004 ◽  
Author(s):  
Sylvain David ◽  
Moustapha El Kurdi ◽  
Philippe Boucaud ◽  
Cecile Kammerer ◽  
Xiang Li ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Self Assembled ◽  
Silicon Based

scholarly journals Preferential Orientation of Tetrahedral Silicon-Based Hosts in Phosphorescent Organic Light-Emitting Diodes

ACS Omega ◽  
2018 ◽  
Vol 3 (8) ◽  
pp. 9989-9996 ◽  
Author(s):  
Sunyoung Sohn ◽  
Kwang Hun Park ◽  
Soon-Ki Kwon ◽  
Han-Koo Lee ◽  
Hyungju Ahn ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Preferential Orientation ◽  
Light Emitting ◽  
Organic Light ◽  
Silicon Based

scholarly journals Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source

2018 ◽  
Vol 8 (9) ◽  
pp. 1552 ◽  
Author(s):  
Youngsoo Kim ◽  
Young Lee ◽  
Seokhyeon Hong ◽  
Kihwan Moon ◽  
Soon-Hong Kwon
Keyword(s):  
Photonic Crystal ◽  
Integrated Circuits ◽  
Quality Factor ◽  
Wavelength Region ◽  
High Quality Factor ◽  
Silica Layer ◽  
High Quality ◽  
Light Emitting ◽  
Telecommunication Wavelength ◽  
Silicon Based

The development of an efficient silicon-based nanolight source is an important step for silicon-based photonic integrated circuits. We propose a high quality factor photonic crystal nanocavity consisting of silicon and silica, which can be used as a silicon-compatible nanolight source. We show that this cavity can effectively confine lights in a low-index silica layer with a high confinement factor of 0.25, in which rare-earth dopants can be embedded as gain materials. The cavity is optimized to have a high quality factor of 15,000 and a mode volume of 0.01 μm3, while the resonance has a wavelength of 1537 nm. We expect that the high confinement factor in the thin silica layer and the high quality factor of the proposed cavity enable the cavity to be a good candidate for silicon-compatible nanolight sources for use in nanolasers or light-emitting diodes in the telecommunication wavelength region.

A new cross-linkable 9,10-diphenylanthracene derivative as a wide bandgap host for solution-processed organic light-emitting diodes

2018 ◽  
Vol 6 (47) ◽  
pp. 12948-12954 ◽  
Author(s):  
Rawad K. Hallani ◽  
Vahid Fallah Hamidabadi ◽  
Aron Joel Huckaba ◽  
Gianmarco Galliani ◽  
Azin Babaei ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Wide Bandgap ◽  
Organic Light Emitting Diodes ◽  
Solution Processed ◽  
Light Emitting ◽  
Organic Light

We present a cross-linkable wide bandgap host based on 9-(4-(10-phenylanthracene-9-yl)phenyl)-9H-carbazole.

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