scholarly journals Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons

2018 ◽  
Vol 67 (16) ◽  
pp. 166101
Author(s):  
Qin Li ◽  
Guo Hong-Xia ◽  
Zhang Feng-Qi ◽  
Sheng Jiang-Kun ◽  
Ouyang Xiao-Ping ◽  
...  
Keyword(s):  
Gamma Rays ◽  
Random Access ◽  
Random Access Memory ◽  
Dose Effect ◽  
Total Ionizing Dose ◽  
Access Memory ◽  
Ferroelectric Random Access Memory

Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

2014 ◽  
Vol 104 (18) ◽  
pp. 183507 ◽  
Author(s):  
Runchen Fang ◽  
Yago Gonzalez Velo ◽  
Wenhao Chen ◽  
Keith E. Holbert ◽  
Michael N. Kozicki ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Dose Effect ◽  
Total Ionizing Dose ◽  
Access Memory ◽  
Γ Ray ◽  
Switching Characteristics

scholarly journals Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

2018 ◽  
Vol 65 (8) ◽  
pp. 1708-1714 ◽  
Author(s):  
A. L. Bosser ◽  
V. Gupta ◽  
A. Javanainen ◽  
G. Tsiligiannis ◽  
S. D. LaLumondiere ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Single Event ◽  
Access Memory ◽  
Single Event Effects ◽  
Ferroelectric Random Access Memory
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