scholarly journals Erratum: “Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory” [Appl. Phys. Lett. 104, 183507 (2014)]

2014 ◽  
Vol 104 (21) ◽  
pp. 219902
Author(s):  
Runchen Fang ◽  
Yago Gonzalez Velo ◽  
Wenhao Chen ◽  
Keith E. Holbert ◽  
Michael N. Kozicki ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Dose Effect ◽  
Total Ionizing Dose ◽  
Access Memory ◽  
Γ Ray ◽  
Switching Characteristics

Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

2014 ◽  
Vol 104 (18) ◽  
pp. 183507 ◽  
Author(s):  
Runchen Fang ◽  
Yago Gonzalez Velo ◽  
Wenhao Chen ◽  
Keith E. Holbert ◽  
Michael N. Kozicki ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Dose Effect ◽  
Total Ionizing Dose ◽  
Access Memory ◽  
Γ Ray ◽  
Switching Characteristics

Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)

2015 ◽  
Vol 103 ◽  
pp. 190-194 ◽  
Author(s):  
Fun-Tat Chin ◽  
Yu-Hsien Lin ◽  
Wen-Luh Yang ◽  
Chin-Hsuan Liao ◽  
Li-Min Lin ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Characteristics

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

scholarly journals Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2098
Author(s):  
Xiaojuan Lian ◽  
Xinyi Shen ◽  
Jinke Fu ◽  
Zhixuan Gao ◽  
Xiang Wan ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Research Approach ◽  
Access Memory ◽  
Device Stability ◽  
Switching Characteristics ◽  
Electronic Synapse ◽  
Artificial Intelligence Systems

Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO2 structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO2 and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO2/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO2/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO2/Pt RRAM devices have been discussed on the basis of our experimental results.

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