scholarly journals Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices

2016 ◽  
Vol 65 (1) ◽  
pp. 016802
Author(s):  
Wang Kai ◽  
Xing Yan-Hui ◽  
Han Jun ◽  
Zhao Kang-Kang ◽  
Guo Li-Jian ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Resistivity ◽  
High Electron ◽  
High Electron Mobility

AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers

2008 ◽  
Vol 47 (9) ◽  
pp. 7069-7072 ◽  
Author(s):  
Edward Yi Chang ◽  
Jui-Chien Huang ◽  
Yueh-Chin Lin ◽  
Yen-Chang Hsieh ◽  
Chia-Yuan Chang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
Si Substrate ◽  
High Electron Mobility

High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

2014 ◽  
Vol 1635 ◽  
pp. 9-14 ◽  
Author(s):  
Andrzej Taube ◽  
Maciej Kozubal ◽  
Jakub Kaczmarski ◽  
Marcin Juchniewicz ◽  
Adam Barcz ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Sheet Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Resistivity ◽  
High Electron ◽  
Electrical Measurements ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Insulating Properties

ABSTRACTThe paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×1013 ion/cm2 and 1×1013 ion/cm2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×1011 Ω/□ and increased to 1.17×1014 Ω/□ and 3.29×1012 Ω/□ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×108 Ω/□. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600°C.

AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers

2003 ◽  
Vol 42 (Part 1, No. 4A) ◽  
pp. 1588-1589 ◽  
Author(s):  
Jin-Ping Ao ◽  
Tao Wang ◽  
Daigo Kikuta ◽  
Yu-Huai Liu ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility

scholarly journals Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

2018 ◽  
Vol 124 (5) ◽  
pp. 055702 ◽  
Author(s):  
F. S. Choi ◽  
J. T. Griffiths ◽  
Chris Ren ◽  
K. B. Lee ◽  
Z. H. Zaidi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility ◽  
Leakage Mechanism ◽  
Vertical Leakage ◽  
Gan On Si

Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors

2021 ◽  
Author(s):  
Seshagiri Rao Challa ◽  
Hartmut Witte ◽  
Gordon Schmidt ◽  
Juergen Blaesing ◽  
Nahuel Vega ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Defect Formation ◽  
High Electron Mobility Transistor ◽  
Heavy Ion ◽  
Lattice Parameter ◽  
Parameter Analysis ◽  
Buffer Layers ◽  
High Electron ◽  
Defect States ◽  
High Electron Mobility

Abstract The characteristic energies of traps in InAlN/AlN/GaN high-electron mobility transistor structures on Si(111) substrates formed after irradiation with 75 MeV S-ions is studied by means of c-lattice parameter analysis, vertical IV-characteristics, micro-photoluminescence (µ-PL), photocurrent (PC) and thermally stimulated current (TSC) spectroscopy. From the lattice parameter analysis, point defect formation is concluded as the dominant source of defects upon irradiation. A strong compensation effect mani-fests itself through enhanced resistivity of the devices as found in vertical IV- measure-ments. The defect formation is detected optically by an additional PL-band within the green spectral region while defect states with threshold energies at 2.9 eV and 2.65 eV were observed by PC spectroscopy. TSC spectra exhibit two defect-related emissions between 300 K and 400 K with thermal activation energies of 0.78-0.82 eV and 0.91-0.98 eV, respectively. The data further supports the formation of Ga vacancies (VGa) and related complexes acting mainly as acceptors compensating the originally undoped n-type GaN buffer layers after irradiation.

AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

2017 ◽  
Vol 6 (11) ◽  
pp. S3078-S3080
Author(s):  
Fan Ren ◽  
Stephen J. Pearton ◽  
Shihyun Ahn ◽  
Yi-Hsuan Lin ◽  
Francisco Machuca ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Metallic Alloy ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility
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