scholarly journals Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

2018 ◽  
Vol 124 (5) ◽  
pp. 055702 ◽  
Author(s):  
F. S. Choi ◽  
J. T. Griffiths ◽  
Chris Ren ◽  
K. B. Lee ◽  
Z. H. Zaidi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility ◽  
Leakage Mechanism ◽  
Vertical Leakage ◽  
Gan On Si

AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers

2008 ◽  
Vol 47 (9) ◽  
pp. 7069-7072 ◽  
Author(s):  
Edward Yi Chang ◽  
Jui-Chien Huang ◽  
Yueh-Chin Lin ◽  
Yen-Chang Hsieh ◽  
Chia-Yuan Chang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
Si Substrate ◽  
High Electron Mobility

Robust 600 V GaN high electron mobility transistor technology on GaN-on-Si with 400 V, 5 µs load-short-circuit withstand capability

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EG01 ◽  
Author(s):  
Tetsuzo Nagahisa ◽  
Hisao Ichijoh ◽  
Takamitsu Suzuki ◽  
Alex Yudin ◽  
Alberto O. Adan ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Short Circuit ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan On Si

scholarly journals Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices

2016 ◽  
Vol 65 (1) ◽  
pp. 016802
Author(s):  
Wang Kai ◽  
Xing Yan-Hui ◽  
Han Jun ◽  
Zhao Kang-Kang ◽  
Guo Li-Jian ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Resistivity ◽  
High Electron ◽  
High Electron Mobility

Effect of device geometry on static and dynamic performance of AlGaN/GaN-on-Si high electron mobility transistor

2016 ◽  
Vol 3 (8) ◽  
pp. 085013
Author(s):  
Jin-Shan Shi ◽  
Hong-Fan Huang ◽  
Xiao-Yong Liu ◽  
Sheng-Xun Zhao ◽  
Lin-Qing Zhang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Dynamic Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Device Geometry ◽  
Gan On Si

AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers

2003 ◽  
Vol 42 (Part 1, No. 4A) ◽  
pp. 1588-1589 ◽  
Author(s):  
Jin-Ping Ao ◽  
Tao Wang ◽  
Daigo Kikuta ◽  
Yu-Huai Liu ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility
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