Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Meishoku Masahara; Yongxun Liu; Kazuhiko Endo; Takashi Matsukawa; Kunihiro Sakamoto; Kenichi Ishii; Shinichi O’uchi; Etsuro Sugimata; Hiromi Yamauchi; Eiichi Suzuki

doi:10.1063/1.2173715

Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Applied Physics Letters ◽

10.1063/1.2173715 ◽

2006 ◽

Vol 88 (7) ◽

pp. 072103 ◽

Cited By ~ 7

Author(s):

Meishoku Masahara ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Takashi Matsukawa ◽

Kunihiro Sakamoto ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Fabrication And Characterization

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Fabrication and Characterization of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET)-based Micro pH Sensor

2020 Medical Technologies Congress (TIPTEKNO) ◽

10.1109/tiptekno50054.2020.9299291 ◽

2020 ◽

Author(s):

Fikri Seven ◽

ve Mustafa Sen

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Ph Sensor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fabrication And Characterization

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Fabrication and Characterization of CdF2/CaF2 Resonant Tunneling Floating Gate Metal-oxide-semiconductor Field Effect Transistor Structures

10.7567/ssdm.2008.h-9-3 ◽

2008 ◽

Author(s):

M. Watanabe ◽

T. Wada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Floating Gate ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fabrication And Characterization

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4737779 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024513 ◽

Cited By ~ 7

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

Thin Silicon

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A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations

Journal of Applied Physics ◽

10.1063/1.2360379 ◽

2006 ◽

Vol 100 (8) ◽

pp. 084320 ◽

Cited By ~ 26

Author(s):

A. Lázaro ◽

B. Nae ◽

O. Moldovan ◽

B. Iñiguez

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Model ◽

Double Gate ◽

Effect Transistor

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Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-014-0584-5 ◽

2014 ◽

Vol 89 (6) ◽

pp. 593-598

Author(s):

S. Sarkhel ◽

B. Manna ◽

S. K. Sarkar

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

And Performance

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Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits

Journal of Applied Physics ◽

10.1063/1.1778485 ◽

2004 ◽

Vol 96 (9) ◽

pp. 5271-5276 ◽

Cited By ~ 27

Author(s):

D. Jiménez ◽

B. Iñíguez ◽

J. Suñé ◽

J. J. Sáenz

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scaling Limits ◽

Double Gate ◽

Analog Performance ◽

Effect Transistor

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Direct measurement and characterization of n+ superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy

Applied Physics Letters ◽

10.1063/1.1522819 ◽

2002 ◽

Vol 81 (21) ◽

pp. 3993-3995 ◽

Cited By ~ 14

Author(s):

P. A. Rosenthal ◽

Y. Taur ◽

E. T. Yu

Keyword(s):

Metal Oxide ◽

Direct Measurement ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Cross Sectional ◽

Effect Transistor

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Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.2335967 ◽

2006 ◽

Vol 100 (4) ◽

pp. 044515 ◽

Cited By ~ 76

Author(s):

Siddharth Potbhare ◽

Neil Goldsman ◽

Gary Pennington ◽

Aivars Lelis ◽

James M. McGarrity

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Experimental Characterization ◽

Effect Transistor

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Characterization of high-sensitivity metal oxide semiconductor field effect transistor dosimeters system and LiF:Mg,Cu,P thermoluminescence dosimeters for use in diagnostic radiology

Applied Radiation and Isotopes ◽

10.1016/s0969-8043(02)00235-x ◽

2002 ◽

Vol 57 (6) ◽

pp. 883-891 ◽

Cited By ~ 33

Author(s):

S.L Dong ◽

T.C Chu ◽

G.Y Lan ◽

T.H Wu ◽

Y.C Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

High Sensitivity ◽

Metal Oxide Semiconductor ◽

Diagnostic Radiology ◽

Oxide Semiconductor ◽

Effect Transistor

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