Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI

Xu Xiao-Bo;  Zhang He-Ming;  Hu Hui-Yong

doi:10.7498/aps.60.118501

Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI

Acta Physica Sinica ◽

10.7498/aps.60.118501 ◽

2011 ◽

Vol 60 (11) ◽

pp. 118501

Author(s):

Xu Xiao-Bo ◽

Zhang He-Ming ◽

Hu Hui-Yong

Keyword(s):

Thin Film ◽

Sige Hbt ◽

Capacitance Model

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Application of the interface capacitance model to thin-film relaxors and ferroelectrics

Applied Physics Letters ◽

10.1063/1.2218321 ◽

2006 ◽

Vol 88 (26) ◽

pp. 262904 ◽

Cited By ~ 31

Author(s):

M. Tyunina ◽

J. Levoska

Keyword(s):

Thin Film ◽

Capacitance Model ◽

Interface Capacitance

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Gate Capacitance Model of Polysilicon Thin Film Transistors

Chinese Journal of Liquid Crystals and Displays ◽

10.3788/yjyxs20112602.0178 ◽

2011 ◽

Vol 26 (2) ◽

pp. 178-182

Author(s):

邓婉玲 DENG Wan-ling

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Capacitance ◽

Capacitance Model

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An analytical capacitance model for a hydrogenated amorphous silicon based thin-film transistor

Physics Procedia ◽

10.1016/j.phpro.2011.10.018 ◽

2011 ◽

Vol 21 ◽

pp. 122-127 ◽

Cited By ~ 3

Author(s):

Z. Hafdi

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistor ◽

Hydrogenated Amorphous Silicon ◽

Capacitance Model ◽

Silicon Based ◽

Hydrogenated Amorphous

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A compact model for SiGe HBT on thin-film SOI

IEEE Transactions on Electron Devices ◽

10.1109/ted.2005.862237 ◽

2006 ◽

Vol 53 (2) ◽

pp. 296-303 ◽

Cited By ~ 13

Author(s):

S. Fregonese ◽

G. Avenier ◽

C. Maneux ◽

A. Chantre ◽

T. Zimmer

Keyword(s):

Thin Film ◽

Compact Model ◽

Sige Hbt

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Response to “Comment on ‘Application of the interface capacitance model to thin-film relaxors and ferroelectrics’” [Appl. Phys. Lett. 89, 196101 (2006)]

Applied Physics Letters ◽

10.1063/1.2385632 ◽

2006 ◽

Vol 89 (19) ◽

pp. 196102 ◽

Cited By ~ 4

Author(s):

M. Tyunina ◽

J. Levoska

Keyword(s):

Thin Film ◽

Capacitance Model ◽

Interface Capacitance

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Unified gate capacitance model of polysilicon thin-film transistors for circuit applications

The European Physical Journal Applied Physics ◽

10.1051/epjap:2008109 ◽

2008 ◽

Vol 43 (1) ◽

pp. 43-49 ◽

Cited By ~ 2

Author(s):

W. Deng ◽

X. Zheng ◽

R. Chen ◽

W. Wu ◽

Z. An

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Capacitance ◽

Capacitance Model

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Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546608 ◽

2005 ◽

Cited By ~ 3

Author(s):

S. Fregonese ◽

G. Avenier ◽

C. Maneux ◽

A. Chantre ◽

T. Zimmer

Keyword(s):

Thin Film ◽

Sige Hbt ◽

Collector Junction

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Impact of Collector Length on the Performance of NPN SiGe HBT on Thin Film SOI

Journal of Low Power Electronics ◽

10.1166/jolpe.2014.1326 ◽

2014 ◽

Vol 10 (3) ◽

pp. 392-398

Author(s):

Prasanna Kumar Misra ◽

S. Qureshi

Keyword(s):

Thin Film ◽

Sige Hbt

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Comments on “Application of the interface capacitance model to thin film relaxors and ferroelectrics” [Appl. Phys. Lett. 88, 262904 (2006)]

Applied Physics Letters ◽

10.1063/1.2385627 ◽

2006 ◽

Vol 89 (19) ◽

pp. 196101 ◽

Cited By ~ 2

Author(s):

J. M. Gregg

Keyword(s):

Thin Film ◽

Capacitance Model ◽

Interface Capacitance

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Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOI

10.1117/12.926345 ◽

2012 ◽

Author(s):

Prasanna K. Misra ◽

S. Qureshi

Keyword(s):

Thin Film ◽

Sige Hbt

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