Unified gate capacitance model of polysilicon thin-film transistors for circuit applications

2008 ◽  
Vol 43 (1) ◽  
pp. 43-49 ◽  
Author(s):  
W. Deng ◽  
X. Zheng ◽  
R. Chen ◽  
W. Wu ◽  
Z. An
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Capacitance ◽  
Capacitance Model

Analysis and Compact Modeling of Gate Capacitance in Organic Thin-Film Transistors

2019 ◽  
Vol 66 (5) ◽  
pp. 2370-2374 ◽  
Author(s):  
H. Cortes-Ordonez ◽  
S. Jacob ◽  
F. Mohamed ◽  
G. Ghibaudo ◽  
B. Iniguez
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Compact Modeling ◽  
Organic Thin Film ◽  
Gate Capacitance

scholarly journals Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors

2007 ◽  
Vol 90 (2) ◽  
pp. 023516 ◽  
Author(s):  
Qing Cao ◽  
Minggang Xia ◽  
Coskun Kocabas ◽  
Moonsub Shim ◽  
John A. Rogers ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Gate Capacitance ◽  
Capacitance Coupling

Capacitance Model for Thin-Film Transistors with Interface Traps

2019 ◽  
Vol 33 (5) ◽  
pp. 105-109 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Interface Traps ◽  
Capacitance Model

Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin-Film Transistors With Effective Carrier Density

2011 ◽  
Vol 32 (11) ◽  
pp. 1546-1548 ◽  
Author(s):  
Minkyung Bae ◽  
Yongsik Kim ◽  
Dongsik Kong ◽  
Hyun Kwang Jeong ◽  
Woojoon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Density ◽  
Drain Current ◽  
Analytical Models ◽  
Gate Capacitance ◽  
Amorphous Ingazno ◽  
Effective Carrier

COMPACT CAPACITANCE MODEL FOR PRINTED THIN FILM TRANSISTORS WITH NON-IDEAL CONTACTS

2011 ◽  
Vol 20 (04) ◽  
pp. 801-813
Author(s):  
SHANTANU BHALERAO ◽  
ALEXEY KOUDYMOV ◽  
MICHAEL SHUR ◽  
TROND YTTERDAL ◽  
WARREN JACKSON ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Dispersion Model ◽  
Frequency Dispersion ◽  
Drain Current ◽  
Channel Length ◽  
Amorphous Semiconductors ◽  
Localized States ◽  
Gate Length ◽  
Capacitance Model

We report on a compact capacitance model that accurately describes both the gate length dependent and the gate length independent frequency dispersion observed in C-V curves for printed thin film transistors with non-ideal contacts. We also show that modeling the drain current with two adjacent subthreshold regions (instead of just one in the previous RPI TFT model) is needed to match the measured current-voltage characteristics. We show that Elmore model which accounts for channel length transit time is not sufficient for describing the frequency dispersion in C-V curves for printed TFTs and present the new Variable Dispersion Model (VDM). VDM reproduces the experimentally observed gate length independent dispersion arising due to the finite time of the electron exchange between the localized states in the mobility gap and the states above the mobility edge in amorphous semiconductors. The combined Elmore-VDM model has been implemented in AIM-Spice and showed good agreement with measured C-V data.

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