scholarly journals Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer

2010 ◽  
Vol 59 (8) ◽  
pp. 5823
Author(s):  
Huang Rui ◽  
Wang Dan-Qing ◽  
Song Jie ◽  
Ding Hong-Lin ◽  
Wang Xiang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Properties ◽  
Si Quantum Dots

scholarly journals ORDERED GROUPS OF GE (SI) QUANTUM DOTS ON SOISUBSTRATES INTEGRATED INTO PHOTONIC CRYSTALS

2020 ◽  
Author(s):  
Zhanna Smagina ◽  
Vladimir Zinovyev ◽  
Margarita Stepikhova ◽  
Sergey Rudin ◽  
Ekaterina Rodyakina ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystals ◽  
Calculated Data ◽  
Luminescence Properties ◽  
Ordered Groups ◽  
The Creation ◽  
Soi Substrates ◽  
Si Quantum Dots

Experimental and calculated data on the creation of ordered groups of Ge (Si) quantum dots on structured SOI substrates are presented. The luminescence properties of the obtained structures, including those embedded in photonic crystals, are investigated.

Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment

2012 ◽  
Vol 100 (4) ◽  
pp. 042104 ◽  
Author(s):  
Rosa Ruggeri ◽  
Fortunato Neri ◽  
Antonella Sciuto ◽  
Vittorio Privitera ◽  
Corrado Spinella ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Environment ◽  
Luminescence Properties ◽  
Ir Laser ◽  
Si Quantum Dots

Photovoltaic and luminescence properties of Sb- and P-doped Si quantum dots

2012 ◽  
Vol 60 (10) ◽  
pp. 1616-1619 ◽  
Author(s):  
Jae Hee Park ◽  
Dong Hee Shin ◽  
Chang Oh Kim ◽  
Suk-Ho Choi ◽  
Kyung Joong Kim
Keyword(s):  
Quantum Dots ◽  
Luminescence Properties ◽  
Si Quantum Dots

scholarly journals On the energetic origin of self-limiting trenches formed around Ge∕Si quantum dots

2004 ◽  
Vol 85 (9) ◽  
pp. 1586-1588 ◽  
Author(s):  
D. T. Tambe ◽  
V. B. Shenoy
Keyword(s):  
Quantum Dots ◽  
Si Quantum Dots

Modulation of the photoluminescence of Si quantum dots by means of CO2 laser pre-annealing

2010 ◽  
Vol 256 (16) ◽  
pp. 5116-5119 ◽  
Author(s):  
Yong-bin Chen ◽  
Yong Ren ◽  
Rong-ling Xiong ◽  
You-yuan Zhao ◽  
Ming Lu
Keyword(s):  
Quantum Dots ◽  
Co2 Laser ◽  
Si Quantum Dots

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

scholarly journals High-Resolution Valley Spectroscopy of Si Quantum Dots

2017 ◽  
Vol 119 (17) ◽  
Author(s):  
X. Mi ◽  
Csaba G. Péterfalvi ◽  
Guido Burkard ◽  
J. R. Petta
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
Si Quantum Dots
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