Structural evolution and photoluminescence of annealed Si-rich nitride with Si quantum dots prepared by plasma enhanced chemical vapor deposition

2014 ◽  
Vol 115 (15) ◽  
pp. 154314 ◽  
Author(s):  
Xiangbin Zeng ◽  
Wugang Liao ◽  
Guozhi Wen ◽  
Xixing Wen ◽  
Wenjun Zheng
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Si Quantum Dots

Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition

2004 ◽  
Vol 224 (1-4) ◽  
pp. 148-151 ◽  
Author(s):  
Wen-Yen Chen ◽  
Wen-Hao Chang ◽  
An-Tai Chou ◽  
Tzu-Min Hsu ◽  
Pan-Shiu Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spacer Thickness ◽  
Si Quantum Dots

Effects of spacer thickness on optical properties of stacked Ge/Si quantum dots grown by chemical vapor deposition

2003 ◽  
Vol 93 (9) ◽  
pp. 4999-5002 ◽  
Author(s):  
Wen-Hao Chang ◽  
Wen-Yen Chen ◽  
An-Tai Chou ◽  
Tzu-Min Hsu ◽  
Pan-Shiu Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spacer Thickness ◽  
Si Quantum Dots

Luminescence Tuning of Amorphous Si Quantum Dots Prepared by Plasma-Enhanced Chemical Vapor Deposition

2008 ◽  
Vol 8 (5) ◽  
pp. 2540-2543 ◽  
Author(s):  
S. M. Kang ◽  
S. G. Yoon ◽  
S.-W. Kim ◽  
D. H. Yoon
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Nitrogen Gas ◽  
Flow Rates ◽  
Amorphous Si ◽  
Si Quantum Dots

Amorphous Si (a-Si) quantum dots (QDs) embedded in a silicon nitride film were prepared by a plasma-enhanced chemical vapor deposition (PECVD) technique using gaseous mixtures of silane, hydrogen and nitrogen. We observed that the Si QDs had an amorphous structure from the Raman spectroscopy measurement. The Fourier transform infrared (FTIR) spectra showed that the relative transmittance of the SiH bands decreased, but that of the NH bands increased, with increasing nitrogen flow rate. During the deposition of SiNx, the number of dangling bonds of silicon acting as nucleation sites increased. As the hydrogen flow rate increased the growth rate decreased, due to the reduction in the hydrogen partial pressure. The hydrogen and nitrogen gas flow rates were found to be important parameters for determining the size of the a-Si QDs. In addition, we observed that the PL peak shifted toward a higher energy with increasing hydrogen and nitrogen gas flow rates, which was attributed to the increase in the quantum confinement effect in the a-Si QDs.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

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