Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment

2012 ◽  
Vol 100 (4) ◽  
pp. 042104 ◽  
Author(s):  
Rosa Ruggeri ◽  
Fortunato Neri ◽  
Antonella Sciuto ◽  
Vittorio Privitera ◽  
Corrado Spinella ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Environment ◽  
Luminescence Properties ◽  
Ir Laser ◽  
Si Quantum Dots

Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser

2010 ◽  
Vol 19 (9) ◽  
pp. 097801 ◽  
Author(s):  
Huang Wei-Qi ◽  
Liu Jia-Xing ◽  
Cai Cheng-Lan ◽  
Lü Quan ◽  
Liu Shi-Rong ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Pulse Laser ◽  
Si Quantum Dots

scholarly journals ORDERED GROUPS OF GE (SI) QUANTUM DOTS ON SOISUBSTRATES INTEGRATED INTO PHOTONIC CRYSTALS

2020 ◽  
Author(s):  
Zhanna Smagina ◽  
Vladimir Zinovyev ◽  
Margarita Stepikhova ◽  
Sergey Rudin ◽  
Ekaterina Rodyakina ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystals ◽  
Calculated Data ◽  
Luminescence Properties ◽  
Ordered Groups ◽  
The Creation ◽  
Soi Substrates ◽  
Si Quantum Dots

Experimental and calculated data on the creation of ordered groups of Ge (Si) quantum dots on structured SOI substrates are presented. The luminescence properties of the obtained structures, including those embedded in photonic crystals, are investigated.

Luminescence Properties of CdSe Quantum Dots: Role of Crystal Structure and Surface Composition

2013 ◽  
Vol 4 (16) ◽  
pp. 2774-2779 ◽  
Author(s):  
K. B. Subila ◽  
G. Kishore Kumar ◽  
S. M. Shivaprasad ◽  
K. George Thomas
Keyword(s):  
Crystal Structure ◽  
Quantum Dots ◽  
Surface Composition ◽  
Luminescence Properties ◽  
Cdse Quantum Dots

Chemical role of amines in the colloidal synthesis of CdSe quantum dots and their luminescence properties

2007 ◽  
Vol 126 (1) ◽  
pp. 21-26 ◽  
Author(s):  
Katsuhiro Nose ◽  
Hiroshi Fujita ◽  
Takahisa Omata ◽  
Shinya Otsuka-Yao-Matsuo ◽  
Hiroyuki Nakamura ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Properties ◽  
Colloidal Synthesis ◽  
Cdse Quantum Dots

Role of the interface for the electronic structure of Si quantum dots

2008 ◽  
Vol 78 (3) ◽  
Author(s):  
Dirk König ◽  
James Rudd ◽  
Martin A. Green ◽  
Gavin Conibeer
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Si Quantum Dots

The dual-defect passivation role of lithium bromide doping in reducing the nonradiative loss in CsPbX3 (X = Br and I) quantum dots

2021 ◽  
Author(s):  
Hao Wu ◽  
Jianbei Qiu ◽  
Jing Wang ◽  
Yugeng Wen ◽  
Qi Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Lithium Bromide ◽  
Luminescence Properties ◽  
Radiative Loss ◽  
Defect Passivation

Lithium bromide as a new duel-defect passivation agent can effectively enhance luminescence properties by reducing the non-radiative loss.

scholarly journals Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer

2010 ◽  
Vol 59 (8) ◽  
pp. 5823
Author(s):  
Huang Rui ◽  
Wang Dan-Qing ◽  
Song Jie ◽  
Ding Hong-Lin ◽  
Wang Xiang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Properties ◽  
Si Quantum Dots

Photovoltaic and luminescence properties of Sb- and P-doped Si quantum dots

2012 ◽  
Vol 60 (10) ◽  
pp. 1616-1619 ◽  
Author(s):  
Jae Hee Park ◽  
Dong Hee Shin ◽  
Chang Oh Kim ◽  
Suk-Ho Choi ◽  
Kyung Joong Kim
Keyword(s):  
Quantum Dots ◽  
Luminescence Properties ◽  
Si Quantum Dots

Optical Properties of Si Quantum Dots in Silica via an Implantation Mask

2009 ◽  
Vol 1208 ◽  
Author(s):  
Eric G. Barbagiovanni ◽  
Lyudmila V Goncharova ◽  
Peter J Simpson ◽  
Nathan Armstrong
Keyword(s):  
Quantum Dots ◽  
Peak Shift ◽  
Nucleation And Growth ◽  
Quantum Field ◽  
Photoluminescence Spectra ◽  
Silica Microspheres ◽  
Transmission Electron ◽  
Si Quantum Dots ◽  
Field Theoretical Model

AbstractWe studied photoluminescent properties and luminescent decay dynamics in Si quantum dots (QDs) produced by Si implantation in SiO2, and their modification by the application of an implantation mask. Silicon quantum dots were prepared by ion implantation, followed by high temperature annealing leading to nanocrystal nucleation and growth. The mask was prepared by spin-coating silica microspheres to achieve laterally-selective implantation, to control QD size and separation. Transmission electron microscopy (TEM) images were obtained to verify the diameter of the quantum dots. We observe a noticeable peak shift and narrowing in the photoluminescence spectra with the application of the implantation mask. Observed maxima in the photoluminescence spectra are compared with a quantum field theoretical model using an infinite confining 1D potential for Si quantum dots. We comment on the role of excitation transfer by observing a change in the dispersion exponent of the luminescent decay dynamics due to the mask.

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