scholarly journals The influence of deposition temperature on the structure of microcrystalline silicon film

2007 ◽  
Vol 56 (7) ◽  
pp. 4122
Author(s):  
Chen Yong-Sheng ◽  
Gao Xiao-Yong ◽  
Yang Shi-E ◽  
Lu Jing-Xiao ◽  
Gu Jin-Hua
1998 ◽  
Vol 227-230 ◽  
pp. 857-860 ◽  
Author(s):  
Jiang-Huai Zhou ◽  
Kazuyuki Ikuta ◽  
Tetsuji Yasuda ◽  
Takahide Umeda ◽  
Satoshi Yamasaki ◽  
...  

2000 ◽  
Vol 62 (2) ◽  
pp. 153-157 ◽  
Author(s):  
Chun-Yen Chang ◽  
Yeong-Shyang Lee ◽  
Tiao-Yuan Huang ◽  
Po-Sheng Shih ◽  
Chiung-Wei Lin

1989 ◽  
Vol 164 ◽  
Author(s):  
Cheng Wang ◽  
G.N. Parsons ◽  
E.C. Buehler ◽  
R.J. Nemanich ◽  
G. Lucovsky

AbstractWe have deposited microcrystalline, gc-Si, silicon films by using RF reactive magnetron sputtering (RMS) at high substrate temperatures, Ts > 500°C, and at a relatively low partial pressure of hydrogen, PH = 0.40 mTorr, and at low Ts ∼200- 300°C, but with a higher PH > 2 mTorr. We have detected μc-crystallinity by Raman scattering and transmission electron microscopy. We discuss differences in the growth mechanisms for formation of μc-Si under these two deposition conditions.


1996 ◽  
Vol 198-200 ◽  
pp. 1012-1016 ◽  
Author(s):  
S. Koynov ◽  
S. Grebner ◽  
P. Radojkovic ◽  
E. Hartmann ◽  
R. Schwarz ◽  
...  

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