scholarly journals Measurement of metastable state densities and electron temperatures in an electron cyclotron resonance argon plasma

2005 ◽  
Vol 54 (5) ◽  
pp. 2153
Author(s):  
Chen Zhuo ◽  
He Wei ◽  
Pu Yi-Kang
Keyword(s):  
Metastable State ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Argon Plasma ◽  
Electron Cyclotron ◽  
State Densities

Attenuation of wall disturbances in an electron cyclotron resonance oxygen–argon plasma using real time control

2014 ◽  
Vol 32 (4) ◽  
pp. 041301 ◽  
Author(s):  
Bernard Keville ◽  
Cezar Gaman ◽  
Yang Zhang ◽  
Anthony M. Holohan ◽  
Miles M. Turner ◽  
...  
Keyword(s):  
Real Time ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Argon Plasma ◽  
Electron Cyclotron ◽  
Real Time Control ◽  
Time Control

Etching of SiO2in an electron cyclotron resonance argon plasma

1990 ◽  
Vol 56 (14) ◽  
pp. 1311-1313 ◽  
Author(s):  
S. Salimian ◽  
C. B. Cooper ◽  
A. Ellingboe
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Argon Plasma ◽  
Electron Cyclotron

High Quality Growth of SiO2 at 80° C by Electron Cyclotron Resonance (ECR) for Thin Film Transistors

2001 ◽  
Vol 685 ◽  
Author(s):  
Riyaz Rashid ◽  
A. J. Flewitt ◽  
D. Grambole ◽  
U. Kreiβig ◽  
J. Robertson ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Breakdown Strength ◽  
Plasma Reactor ◽  
Interface State ◽  
Electron Cyclotron ◽  
Ecr Plasma ◽  
Ion Energies ◽  
Phase Combination ◽  
State Densities

AbstractSilicon dioxide (SiO2) films have been deposited at 80°C in an Electron Cyclotron Resonance (ECR) plasma reactor from a gas phase combination of He, O2 and SiH4. The ECR configuration provides a highly ionised plasma (∼1016 m−3) with low ion energies (∼10eV) that gives efficient dehydrogenation of the growing material whilst minimizing defect creation. The physical characterisation of the material gives a refractive index of 1.46, an etch rate in buffered HF below 3 nm/s and a hydrogen content of less than 2 at.%. Electrical tests reveal a resistivity in excess of 1014Ωcm, an average breakdown strength of 5 MV/cm, and fixed charge and interface state densities of 1011 cm−2 and 1012 eV−1cm−2 respectively. This has been achieved using a O2:SiH4 flow ratio ≍ 2:1.

Anisotropic electron cyclotron resonance etching of tungsten films on GaAs

1994 ◽  
Vol 30 (1) ◽  
pp. 84-85 ◽  
Author(s):  
R.J. Shul ◽  
D.J. Rieger ◽  
C. Constantine ◽  
A.G. Baca ◽  
C. Barratt
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron
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