Attenuation of wall disturbances in an electron cyclotron resonance oxygen–argon plasma using real time control

2014 ◽  
Vol 32 (4) ◽  
pp. 041301 ◽  
Author(s):  
Bernard Keville ◽  
Cezar Gaman ◽  
Yang Zhang ◽  
Anthony M. Holohan ◽  
Miles M. Turner ◽  
...  
Keyword(s):  
Real Time ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Argon Plasma ◽  
Electron Cyclotron ◽  
Real Time Control ◽  
Time Control

Real-time control of tearing modes using a line-of-sight electron cyclotron emission diagnostic

2010 ◽  
Vol 52 (10) ◽  
pp. 104006 ◽  
Author(s):  
B A Hennen ◽  
E Westerhof ◽  
P W J M Nuij ◽  
J W Oosterbeek ◽  
M R de Baar ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Cyclotron ◽  
Line Of Sight ◽  
Electron Cyclotron Emission ◽  
Real Time Control ◽  
Tearing Modes ◽  
Time Control ◽  
Cyclotron Emission

scholarly journals Real-time control of electron cyclotron wave polarization in the LHD

2018 ◽  
Vol 131 ◽  
pp. 130-134 ◽  
Author(s):  
T. Ii Tsujimura ◽  
Y. Mizuno ◽  
T. Tokuzawa ◽  
Y. Ito ◽  
S. Kubo ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Cyclotron ◽  
Wave Polarization ◽  
Real Time Control ◽  
Time Control ◽  
Electron Cyclotron Wave

scholarly journals Development of a Real-Time Power/Polarization Monitor using FPGA for Electron Cyclotron Resonance Heating on LHD

2014 ◽  
Vol 9 (0) ◽  
pp. 3405024-3405024 ◽  
Author(s):  
Ryohei MAKINO ◽  
Shin KUBO ◽  
Kenya KOBAYAHI ◽  
Sakuji KOBAYASHI ◽  
Takashi SHIMOZUMA ◽  
...  
Keyword(s):  
Real Time ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Heating

scholarly journals Active real-time control of Alfvén eigenmodes by neutral beam and electron cyclotron heating in the DIII-D tokamak

2018 ◽  
Vol 58 (12) ◽  
pp. 124001
Author(s):  
Wenhui Hu ◽  
K.E.J. Olofsson ◽  
A.S. Welander ◽  
W.W. Heidbrink ◽  
M.A. Van Zeeland ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Cyclotron ◽  
Neutral Beam ◽  
Electron Cyclotron Heating ◽  
Real Time Control ◽  
Time Control ◽  
Alfven Eigenmodes

In Situ Studies of Electron Cyclotron Resonance Plasma Etching of Semiconductors by Spectroscopic Ellipsometry

1992 ◽  
Vol 279 ◽  
Author(s):  
S. Nafis ◽  
N. J. Ianno ◽  
Paul G. Snyder ◽  
John A. Woollam ◽  
Blame Johs
Keyword(s):  
Real Time ◽  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Bulk Silicon ◽  
Bulk Materials ◽  
Insight Into ◽  
Resonance Plasma

ABSTRACTIn situ ellipsometry at selected wavelengths in the spectral range 280 nm to 1000 nnn was performed during the rf bias assisted electron cyclotron resonance (ECR) etching of bulk silicon, GaAs, InP, and GaAs/AlGaAs/GaAs, and InGaAs/InP layered strcutures by a CCl2F2 based etch gas.While real time thickness changes for bulk materials cannot be determined ellipsometrically, some insight into the etch mechanism may be gained by observing the effect of the process on the surface dynamically, and after the etch process has been completed. Monitoring of the layered structures during etching can provide a real time measure of the amount of material remaining in the layer being etched, and provide tight process control.

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