Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film

2003 ◽  
Vol 94 (9) ◽  
pp. 5599-5604 ◽  
Author(s):  
C. Y. Chen ◽  
W. D. Chen ◽  
S. F. Song ◽  
Z. J. Xu ◽  
X. B. Liao ◽  
...  
2002 ◽  
Vol 16 (28n29) ◽  
pp. 4246-4249 ◽  
Author(s):  
C. Y. CHEN ◽  
W. D. CHEN ◽  
S. F. SONG ◽  
C. C. HSU

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide ( a - SiO X : H 〈 Er 〉( x <2.0)) films was measured. Two luminescence bands with maxima at λ ≅ 750 nm and λ ≅ 1.54μ m, ascribed to the a - SiO x : H intrinsic emission and Er 3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000°C. Micro-Raman results indicate that the a - SiO x : H < Er > films are a mixture of two phases, an amorphous SiO x matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a - SiO x : H < Er > films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er 3+ emission. Our study emphasizes the role of a-Si domains on Er 3+ emission in a - SiO x : H < Er > films.


1996 ◽  
Vol 68 (1) ◽  
pp. 46-48 ◽  
Author(s):  
Jung H. Shin ◽  
R. Serna ◽  
G. N. van den Hoven ◽  
A. Polman ◽  
W. G. J. H. M. van Sark ◽  
...  

1999 ◽  
Vol 79 (8) ◽  
pp. 1205-1211 ◽  
Author(s):  
M. Kechouane ◽  
N. Beldi ◽  
O. Mouheb ◽  
T. Mohammed-Brahim ◽  
A. S. Barriere ◽  
...  

1995 ◽  
Vol 67 (24) ◽  
pp. 3599-3601 ◽  
Author(s):  
M. S. Bresler ◽  
O. B. Gusev ◽  
V. Kh. Kudoyarova ◽  
A. N. Kuznetsov ◽  
P. E. Pak ◽  
...  

1998 ◽  
Vol 507 ◽  
Author(s):  
N.A. Feoktistov ◽  
V.G. Golubev ◽  
A.V. Medvedev ◽  
A.B. Pevtsov

ABSTRACT1·54 jim light-emitting erbium-doped hydrogenated amorphous silicon films have been fabricated by standard low temperature (200 – 250 °C) PE CVD technique. The films were doped with erbium during the deposition by making use of a new fluorine-containing metalorganic compound Er(HFA)3*DME [where HFA=CF3C(O)CHC(O)CF3, DME=CH3OCH2CH2OCH3]. Photoluminescence spectra of the a-Si(Er):H films were studied within the range 0·6–1·7 pm at both 77 K and 295 K. A photoconductivity was also detected. The photo- to dark conductivity ratio was on the order of 103.


1996 ◽  
Vol 68 (7) ◽  
pp. 997-999 ◽  
Author(s):  
Jung H. Shin ◽  
R. Serna ◽  
G. N. van den Hoven ◽  
A. Polman ◽  
W. G. J. H. M. van Sark ◽  
...  

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