Erbium-Doped A-Si:H Films Fabricated by Standard Pecvd Using Metalorganics

1998 ◽  
Vol 507 ◽  
Author(s):  
N.A. Feoktistov ◽  
V.G. Golubev ◽  
A.V. Medvedev ◽  
A.B. Pevtsov
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Conductivity Ratio ◽  
Photoluminescence Spectra ◽  
Light Emitting ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

ABSTRACT1·54 jim light-emitting erbium-doped hydrogenated amorphous silicon films have been fabricated by standard low temperature (200 – 250 °C) PE CVD technique. The films were doped with erbium during the deposition by making use of a new fluorine-containing metalorganic compound Er(HFA)3*DME [where HFA=CF3C(O)CHC(O)CF3, DME=CH3OCH2CH2OCH3]. Photoluminescence spectra of the a-Si(Er):H films were studied within the range 0·6–1·7 pm at both 77 K and 295 K. A photoconductivity was also detected. The photo- to dark conductivity ratio was on the order of 103.

Effect of Deposition Temperature on the Photoresponse of Crystallized Hydrogenated Amorphous Silicon Films

1994 ◽  
Vol 358 ◽  
Author(s):  
Nagarajan Sridhar ◽  
D. D. L. Chung ◽  
W. A. Anderson ◽  
J. Coleman
Keyword(s):  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Furnace Annealing ◽  
C 50 ◽  
Hydrogenated Amorphous

ABSTRACTThe deposition temperature of hydrogenated amorphous silicon films deposited by dc glow discharge was found to affect the photoresponse (ratio of the photo to dark conductivity) after crystallization of the film. This effect depended on the crystallization technique. For crystallization by laser annealing, the photoresponse (0.15 - 1.5) increased with increasing deposition temperature (150 - 300 °C) due to the increase in SiH and SiH2 bonding, as shown by infrared spectroscopy. For crystallization by furnace annealing (e.g. 650 °C, 50 h), the photoresponse (0.08 - 0) decreased with increasing deposition temperature (150 - 300 °C) due to the decrease in grain size and crystallinity as shown by x-ray diffraction; the complete loss in hydrogen during furnace annealing made the photoresponse low and the silicon-hydrogen bonding effect immaterial. Thus, laser crystallization at the highest deposition temperature gave the highest photoresponse.

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