scholarly journals VALENCE BAND OFFSETS OF Ge/ZnSe(100) STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION

1997 ◽  
Vol 46 (3) ◽  
pp. 587
Author(s):  
BAN DA-YAN ◽  
FANG RONG-CHUAN ◽  
YANG FENG-YUAN ◽  
XU SHI-HONG ◽  
XU PENG-SHOU ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Valence Band ◽  
Band Offsets ◽  
Synchrotron Radiation Photoemission

scholarly journals VALENCE BAND OFFSETS OF Si/ZnS POLAR INTERFACES: A SYNCHROTRON RADIATION PHOTOEMISSION STUDY

1997 ◽  
Vol 46 (9) ◽  
pp. 1817
Author(s):  
BAN DA-YAN ◽  
FANG RONG-CHUAN ◽  
XUE JIAN-GENG ◽  
LU ER-DONG ◽  
XU SHI-HONG ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Valence Band ◽  
Band Offsets ◽  
Photoemission Study ◽  
Synchrotron Radiation Photoemission

ELECTRONIC STRUCTURE OF CoSe2

2002 ◽  
Vol 09 (02) ◽  
pp. 1315-1319 ◽  
Author(s):  
H. SATO ◽  
F. NAGASAKI ◽  
Y. KANI ◽  
S. SENBA ◽  
Y. UEDA ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Synchrotron Radiation ◽  
Fermi Level ◽  
Valence Band ◽  
Electron Correlation ◽  
The Other ◽  
Photoemission Spectrum ◽  
Main Peak ◽  
Inverse Photoemission ◽  
Synchrotron Radiation Photoemission

The valence-band and conduction-band electronic structure of pyrite-type CoSe 2 has been investigated by means of ultraviolet-photoemission, synchrotron-radiation-photoemission and inverse-photoemission spectroscopies. The fully occupied Co 3d states with t 2g symmetry are observed as a main peak at -1.0 eV relative to the Fermi level (E F ), and the partially filled Co 3d states with e g symmetry are observed as a shoulder at the E F side of the main peak. On the other hand, the structure due to the unoccupied Co e g states appears at 0.6 eV in the inverse-photoemission spectrum. The electronic structure of CoSe 2 is similar to that of CoS 2. The electron correlation is more important for CoSe 2 than for CoS 2.

Photoemission Studies of Amorphous Silicon/Germanium Heterojunctions

1985 ◽  
Vol 49 ◽  
Author(s):  
F. Evangelisti ◽  
S. Modesti ◽  
F. Boscherini ◽  
P. Fiorini ◽  
C. Quaresima ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Amorphous Silicon ◽  
Valence Band ◽  
Silicon Germanium ◽  
Interface Formation ◽  
Band Bending ◽  
Amorphous Silicon Germanium ◽  
Synchrotron Radiation Photoemission ◽  
Valence Band Discontinuity

AbstractThe heterostructures obtained by growing a-Ge on a-Si:H and a-Si have been investigated by synchrotron radiation photoemission. We measured valence band and core level spectra on the heterostructures grown in situ under ultrahigh-vacuum conditions. A step-by-step monitoring of possible band-bending changes during the interface formation enabled us to determine unambiguously the band discontinuities. The measured values of the valence band discontinuity were 0.2 ± 0.1 eV for a-Si:H/a-Ge and 0.0 ± 0.1 eV for a-Si/a-Ge, respectively. Evidence was found for the formation of abrupt interfaces without interdiffusion.

Sign in / Sign up

Export Citation Format

Share Document