Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy

1997 ◽  
Vol 70 (18) ◽  
pp. 2407-2409 ◽  
Author(s):  
S. A. Ding ◽  
S. R. Barman ◽  
K. Horn ◽  
H. Yang ◽  
B. Yang ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Cubic Gan ◽  
Synchrotron Radiation Photoemission ◽  
Valence Band Discontinuity

Photoemission Studies of Amorphous Silicon/Germanium Heterojunctions

1985 ◽  
Vol 49 ◽  
Author(s):  
F. Evangelisti ◽  
S. Modesti ◽  
F. Boscherini ◽  
P. Fiorini ◽  
C. Quaresima ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Amorphous Silicon ◽  
Valence Band ◽  
Silicon Germanium ◽  
Interface Formation ◽  
Band Bending ◽  
Amorphous Silicon Germanium ◽  
Synchrotron Radiation Photoemission ◽  
Valence Band Discontinuity

AbstractThe heterostructures obtained by growing a-Ge on a-Si:H and a-Si have been investigated by synchrotron radiation photoemission. We measured valence band and core level spectra on the heterostructures grown in situ under ultrahigh-vacuum conditions. A step-by-step monitoring of possible band-bending changes during the interface formation enabled us to determine unambiguously the band discontinuities. The measured values of the valence band discontinuity were 0.2 ± 0.1 eV for a-Si:H/a-Ge and 0.0 ± 0.1 eV for a-Si/a-Ge, respectively. Evidence was found for the formation of abrupt interfaces without interdiffusion.

Growth and Characterization of the Binary Defect Alloy Cu2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation

1995 ◽  
Vol 378 ◽  
Author(s):  
Art J. Nelson ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Interfacial Chemistry ◽  
Valence Band Offset ◽  
Force Microscopy ◽  
Atomic Force ◽  
Valence Band Discontinuity

AbstractSynchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.

Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy

1995 ◽  
Vol 24 (4) ◽  
pp. 225-227 ◽  
Author(s):  
G. Martin ◽  
S. Strite ◽  
A. Botchkarev ◽  
A. Agarwal ◽  
A. Rockett ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Valence Band Discontinuity

Characterization of air-exposure/activation cycles of porous Ti–Zr–V getter film using synchrotron radiation photoemission spectroscopy

2009 ◽  
Vol 517 (13) ◽  
pp. 3672-3676 ◽  
Author(s):  
Chien-Cheng Li ◽  
Jow-Lay Huang ◽  
Ran-Jin Lin ◽  
Ding-Fwu Lii ◽  
Chia-Hao Chen ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoemission Spectroscopy ◽  
Air Exposure ◽  
Porous Ti ◽  
Synchrotron Radiation Photoemission
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