Thickness-dependent change in the valence band offset of the SiO2/Si interface studied using synchrotron-radiation photoemission spectroscopy

2016 ◽  
Vol 120 (8) ◽  
pp. 085306 ◽  
Author(s):  
S. Toyoda ◽  
M. Oshima
Keyword(s):  
Synchrotron Radiation ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
Dependent Change ◽  
Synchrotron Radiation Photoemission

The growth of ZnO on buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

2010 ◽  
Vol 150 (41-42) ◽  
pp. 1991-1994 ◽  
Author(s):  
H.P. Song ◽  
G.L. Zheng ◽  
A.L. Yang ◽  
Y. Guo ◽  
H.Y. Wei ◽  
...  
Keyword(s):  
Valence Band ◽  
Buffer Layers ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

In-Situ Studies of Semimagnetic Heterojunction Parameters

1989 ◽  
Vol 161 ◽  
Author(s):  
Xiaohua Yu ◽  
N. Troullier ◽  
A. Raisanen ◽  
G. Haugstad ◽  
A. Franciosi
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Band Offset ◽  
Experimental Uncertainty ◽  
Valence Band Offset ◽  
Transitivity Rule ◽  
The Common ◽  
Synchrotron Radiation Photoemission ◽  
Common Anion

ABSTRACTWe have conducted a systematic study of Ge-Cd1−xMnxTe heterostructures prepared in situ by deposition of polycrystalline Ge onto atomically clean Cd1−xMnx (110) surfaces. We examined by means of high resolution synchrotron radiation photoemission the valence band offset δEv as a function of the substrate composition x (x=0, 0.35, and 0.60) and bandgap Eg (Eg = 1.47, 1.93, and 2.13 eV). We find δEv=0.84±0.10eV in all cases, and no dependence of δEv on the substrate bandgap within experimental uncertainty. This finding indicates that within the range of validity of the transitivity rule, Cd1−xMnx-Cd1−yMny heterojunctions may actually follow the common anion rule.

Band structure and valence-band offset of HfO2 thin film on Si substrate from photoemission spectroscopy

2009 ◽  
Vol 97 (2) ◽  
pp. 475-479 ◽  
Author(s):  
Tingting Tan ◽  
Zhengtang Liu ◽  
Hongcheng Lu ◽  
Wenting Liu ◽  
Feng Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Band Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Si Substrate ◽  
Valence Band Offset

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

2008 ◽  
Vol 78 (3) ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
C. E. Kendrick ◽  
L. R. Bailey ◽  
S. M. Durbin ◽  
...  
Keyword(s):  
High Resolution ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

scholarly journals Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

2008 ◽  
Vol 93 (20) ◽  
pp. 202108 ◽  
Author(s):  
T. D. Veal ◽  
P. D. C. King ◽  
S. A. Hatfield ◽  
L. R. Bailey ◽  
C. F. McConville ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

Valence band offset determination of CdSeTe and CdMgTe alloys with CdTe using X-ray photoemission spectroscopy

2020 ◽  
Vol 529 ◽  
pp. 147126 ◽  
Author(s):  
E.G. LeBlanc ◽  
D. Leinen ◽  
M. Edirisooriya ◽  
A. Los ◽  
T.H. Myers
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

scholarly journals X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

2007 ◽  
Vol 91 (11) ◽  
pp. 112103 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
S. A. Hatfield ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Cubic Zirconia
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