scholarly journals A STUDY OF TRANSIENT CAPACITANCE OF GOLD ACCEPTOR ENERGY LEVEL IN SILICON UNDER UNIAXIAL STRESS

1984 ◽  
Vol 33 (3) ◽  
pp. 377
Author(s):  
YAO XIU-CHEN ◽  
QIN GUO-GANG ◽  
ZENG SHU-RONG ◽  
YUAN MIN-HUA
Keyword(s):  
Energy Level ◽  
Uniaxial Stress ◽  
Transient Capacitance ◽  
Acceptor Energy Level

Effect of ordered structure on the acceptor energy level of Be‐doped Al0.5In0.5P

1992 ◽  
Vol 71 (2) ◽  
pp. 1041-1043 ◽  
Author(s):  
T. Yokotsuka ◽  
T. Suzuki ◽  
A. Takamori ◽  
M. Nakajima
Keyword(s):  
Energy Level ◽  
Ordered Structure ◽  
Acceptor Energy Level

The neutral vacancy in diamond

1973 ◽  
Vol 334 (1597) ◽  
pp. 241-257 ◽  
Keyword(s):  
Energy Level ◽  
Optical Absorption ◽  
Radiation Damage ◽  
Thermal Behaviour ◽  
Level Scheme ◽  
Uniaxial Stress ◽  
Energy Level Diagram ◽  
Energy Level Scheme ◽  
Tetrahedral Symmetry ◽  
Intrinsic Defects

The GR 1 radiation damage centre in diamond has been studied by means of optical absorption and uniaxial stress. Two zero phonon lines at 1.665 and 1.673 eV have been associated with the defect, and an energy level scheme is proposed to explain the thermal behaviour of the lines. The energy level diagram facilitates the interpretation of the uniaxial stress data, and it is concluded that the defect possesses tetrahedral symmetry. Comparison of the energy level scheme derived experimentally with theoretical treatments of intrinsic defects in diamonds suggests that the GR 1 centre is probably the neutral vacancy.

Identification of Radiation-Induced Defects in Si:Al

1989 ◽  
Vol 163 ◽  
Author(s):  
Ya.I. Latushko ◽  
V.V. Petrov
Keyword(s):  
Energy Level ◽  
Spectral Range ◽  
Infrared Absorption ◽  
Uniaxial Stress ◽  
Migration Energy ◽  
Stress Measurements ◽  
Type Defect ◽  
Radiation Induced ◽  
Induced Defects

AbstractRadiation-induced defects (RD) in Si.:Al have been investigated by means of infrared absorption (IRA) and photoluminescence (PL) methods. It has been found that the main Al containing RD in electron-irradiated Si is an interstitial Al atom (Al1). In the process of annealing at about 225 °C the production of Al1-Al1 pairs takes place. The activatin energy of this RD production is 0.95 eV, which corresponds to Al1 migration energy along hexagonal interstitials. Al1 is shown to be a two - charge donor with the energy level E(+/++) = Ev + 0.20 eV. Besides the above mentioned defect as well as acceptor type defect with Ev + 0.21 eV level a number of other defects has been revealed in neutron-irradiated Si:Al. These centers give rise to a great number of IRA and PL lines in the spectral range from 0.1 to 1.2 eV. The classification of the observed defects has been done on the basis of the annealing results and uniaxial stress measurements.

A Formation Mechanism of X Level due to an Indium-Carbon Dimer in Silicon

2012 ◽  
Vol 502 ◽  
pp. 154-158 ◽  
Author(s):  
Hiroyuki Kawanishi ◽  
Yoshinori Hayafuji
Keyword(s):  
Energy Level ◽  
Formation Mechanism ◽  
Electronic Structures ◽  
Ab Initio Calculation ◽  
Indium Atom ◽  
Acceptor Level ◽  
Calculation Methods ◽  
Atomic Orbitals ◽  
Bonding Interaction ◽  
Acceptor Energy Level

It is known that acceptor-carbon complexes have ionization energies less than those of the corresponding substitutional, separate acceptors in silicon. We present the formation mechanism for a shallower acceptor energy level called an X level that is due to an indium- carbon pair. Ab initio calculation methods were used to evaluate electronic structures and lattice relaxations of silicon with indium, carbon or a carbon-indium dimer. The results shows that the bonding interaction between the 5p orbitals of the indium atom and the 3sp orbitals of the silicon atoms bound with the indium atom mainly determines the ionization energy of the X level, and the ionic bonding interaction of the carbon atomic orbitals with the indium atomic orbitals in the X level enables the bonding interaction of the orbitals between the indium atom and the silicon atom to lower the corresponding indium acceptor level, and then to form the shallower X level.

Acceptor energy level for Zn in Ga1−xAlxAs

1980 ◽  
Vol 51 (2) ◽  
pp. 1060-1064 ◽  
Author(s):  
Kazuya Masu ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Energy Level ◽  
Acceptor Energy Level

Temperature dependence of the gold acceptor energy level in silicon

1974 ◽  
Vol 25 (7) ◽  
pp. 413-415 ◽  
Author(s):  
O. Engström ◽  
H. G. Grimmeiss
Keyword(s):  
Energy Level ◽  
Temperature Dependence ◽  
Acceptor Energy Level

Acceptor Energy Level Control of Charge Photogeneration in Organic Donor/Acceptor Blends

2010 ◽  
Vol 132 (37) ◽  
pp. 12919-12926 ◽  
Author(s):  
Safa Shoaee ◽  
Tracey M. Clarke ◽  
Chun Huang ◽  
Stephen Barlow ◽  
Seth R. Marder ◽  
...  
Keyword(s):  
Energy Level ◽  
Level Control ◽  
Donor Acceptor ◽  
Acceptor Energy Level
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