Temperature dependence of the gold acceptor energy level in silicon

1974 ◽  
Vol 25 (7) ◽  
pp. 413-415 ◽  
Author(s):  
O. Engström ◽  
H. G. Grimmeiss
Keyword(s):  
Energy Level ◽  
Temperature Dependence ◽  
Acceptor Energy Level

Carrier Hopping and Relaxation in InAs/GaAs Quantum Dot Heterostructures

2014 ◽  
Vol 875-877 ◽  
pp. 9-13
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Temperature Dependence ◽  
Thermal Emission ◽  
Carrier Dynamics ◽  
Photoluminescence Spectra ◽  
Discrete Energy ◽  
Discrete Energy Level ◽  
Size Uniformity ◽  
Gaas Quantum Dot

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carriers relaxing and thermal emission of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for sample with lower dot size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carriers relaxing process of quantum dot system is demonstrated by our model.

scholarly journals A STUDY OF TRANSIENT CAPACITANCE OF GOLD ACCEPTOR ENERGY LEVEL IN SILICON UNDER UNIAXIAL STRESS

1984 ◽  
Vol 33 (3) ◽  
pp. 377
Author(s):  
YAO XIU-CHEN ◽  
QIN GUO-GANG ◽  
ZENG SHU-RONG ◽  
YUAN MIN-HUA
Keyword(s):  
Energy Level ◽  
Uniaxial Stress ◽  
Transient Capacitance ◽  
Acceptor Energy Level

Discrete energy level separation and the threshold temperature dependence of quantum dot lasers

2000 ◽  
Vol 77 (4) ◽  
pp. 466-468 ◽  
Author(s):  
Oleg B. Shchekin ◽  
Gyoungwon Park ◽  
Diana L. Huffaker ◽  
Dennis G. Deppe
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Temperature Dependence ◽  
Threshold Temperature ◽  
Quantum Dot Lasers ◽  
Discrete Energy ◽  
Discrete Energy Level

Accurate Determination of Density and Energy Level of B Acceptor in Diamond from Temperature Dependence of Hole Concentration

2006 ◽  
Vol 45 (8A) ◽  
pp. 6376-6378 ◽  
Author(s):  
Hideharu Matsuura ◽  
Tatsuya Morizono ◽  
Yuuki Inoue ◽  
Sou Kagamihara ◽  
Akihiko Namba ◽  
...  
Keyword(s):  
Energy Level ◽  
Temperature Dependence ◽  
Hole Concentration ◽  
Accurate Determination

Effect of ordered structure on the acceptor energy level of Be‐doped Al0.5In0.5P

1992 ◽  
Vol 71 (2) ◽  
pp. 1041-1043 ◽  
Author(s):  
T. Yokotsuka ◽  
T. Suzuki ◽  
A. Takamori ◽  
M. Nakajima
Keyword(s):  
Energy Level ◽  
Ordered Structure ◽  
Acceptor Energy Level

A Formation Mechanism of X Level due to an Indium-Carbon Dimer in Silicon

2012 ◽  
Vol 502 ◽  
pp. 154-158 ◽  
Author(s):  
Hiroyuki Kawanishi ◽  
Yoshinori Hayafuji
Keyword(s):  
Energy Level ◽  
Formation Mechanism ◽  
Electronic Structures ◽  
Ab Initio Calculation ◽  
Indium Atom ◽  
Acceptor Level ◽  
Calculation Methods ◽  
Atomic Orbitals ◽  
Bonding Interaction ◽  
Acceptor Energy Level

It is known that acceptor-carbon complexes have ionization energies less than those of the corresponding substitutional, separate acceptors in silicon. We present the formation mechanism for a shallower acceptor energy level called an X level that is due to an indium- carbon pair. Ab initio calculation methods were used to evaluate electronic structures and lattice relaxations of silicon with indium, carbon or a carbon-indium dimer. The results shows that the bonding interaction between the 5p orbitals of the indium atom and the 3sp orbitals of the silicon atoms bound with the indium atom mainly determines the ionization energy of the X level, and the ionic bonding interaction of the carbon atomic orbitals with the indium atomic orbitals in the X level enables the bonding interaction of the orbitals between the indium atom and the silicon atom to lower the corresponding indium acceptor level, and then to form the shallower X level.

Acceptor energy level for Zn in Ga1−xAlxAs

1980 ◽  
Vol 51 (2) ◽  
pp. 1060-1064 ◽  
Author(s):  
Kazuya Masu ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Energy Level ◽  
Acceptor Energy Level
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