Effect of ordered structure on the acceptor energy level of Be‐doped Al0.5In0.5P

1992 ◽  
Vol 71 (2) ◽  
pp. 1041-1043 ◽  
Author(s):  
T. Yokotsuka ◽  
T. Suzuki ◽  
A. Takamori ◽  
M. Nakajima
Keyword(s):  
Energy Level ◽  
Ordered Structure ◽  
Acceptor Energy Level

scholarly journals A STUDY OF TRANSIENT CAPACITANCE OF GOLD ACCEPTOR ENERGY LEVEL IN SILICON UNDER UNIAXIAL STRESS

1984 ◽  
Vol 33 (3) ◽  
pp. 377
Author(s):  
YAO XIU-CHEN ◽  
QIN GUO-GANG ◽  
ZENG SHU-RONG ◽  
YUAN MIN-HUA
Keyword(s):  
Energy Level ◽  
Uniaxial Stress ◽  
Transient Capacitance ◽  
Acceptor Energy Level

A Formation Mechanism of X Level due to an Indium-Carbon Dimer in Silicon

2012 ◽  
Vol 502 ◽  
pp. 154-158 ◽  
Author(s):  
Hiroyuki Kawanishi ◽  
Yoshinori Hayafuji
Keyword(s):  
Energy Level ◽  
Formation Mechanism ◽  
Electronic Structures ◽  
Ab Initio Calculation ◽  
Indium Atom ◽  
Acceptor Level ◽  
Calculation Methods ◽  
Atomic Orbitals ◽  
Bonding Interaction ◽  
Acceptor Energy Level

It is known that acceptor-carbon complexes have ionization energies less than those of the corresponding substitutional, separate acceptors in silicon. We present the formation mechanism for a shallower acceptor energy level called an X level that is due to an indium- carbon pair. Ab initio calculation methods were used to evaluate electronic structures and lattice relaxations of silicon with indium, carbon or a carbon-indium dimer. The results shows that the bonding interaction between the 5p orbitals of the indium atom and the 3sp orbitals of the silicon atoms bound with the indium atom mainly determines the ionization energy of the X level, and the ionic bonding interaction of the carbon atomic orbitals with the indium atomic orbitals in the X level enables the bonding interaction of the orbitals between the indium atom and the silicon atom to lower the corresponding indium acceptor level, and then to form the shallower X level.

Acceptor energy level for Zn in Ga1−xAlxAs

1980 ◽  
Vol 51 (2) ◽  
pp. 1060-1064 ◽  
Author(s):  
Kazuya Masu ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Energy Level ◽  
Acceptor Energy Level

Temperature dependence of the gold acceptor energy level in silicon

1974 ◽  
Vol 25 (7) ◽  
pp. 413-415 ◽  
Author(s):  
O. Engström ◽  
H. G. Grimmeiss
Keyword(s):  
Energy Level ◽  
Temperature Dependence ◽  
Acceptor Energy Level

Acceptor Energy Level Control of Charge Photogeneration in Organic Donor/Acceptor Blends

2010 ◽  
Vol 132 (37) ◽  
pp. 12919-12926 ◽  
Author(s):  
Safa Shoaee ◽  
Tracey M. Clarke ◽  
Chun Huang ◽  
Stephen Barlow ◽  
Seth R. Marder ◽  
...  
Keyword(s):  
Energy Level ◽  
Level Control ◽  
Donor Acceptor ◽  
Acceptor Energy Level

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Characterisation of planar crystal defects in Y2Fe17Cx (0.6 ≤ x ≤ 1.6) magnetic material by High Resolution Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 774-775
Author(s):  
W. Coene ◽  
F. Hakkens ◽  
T.H. Jacobs ◽  
K.H.J. Buschow
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Permanent Magnets ◽  
Annealing Treatment ◽  
High Resolution Electron Microscopy ◽  
Crystal Defects ◽  
Ordered Structure ◽  
X Ray ◽  
Planar Crystal ◽  
Resolution Electron

Intermetallic compounds of the type RE2Fe17Cx (RE= rare earth element) are promising candidates for permanent magnets. In case of Y2Fe17Cx, the Curie temperature increases from 325 K for x =0 to 550 K for x = 1.6 . X ray and electron diffraction reveal a carbon - induced structural transformation in Y2Fe17Cx from the hexagonal Th2Ni17 - type (x < 0.6 ) to the rhombohedral Th2Zn17 - type ( x ≥ 0.6). Planar crystal defects introduce local sheets of different magnetic anisotropy as compared with the ordered structure, and therefore may have an important impact on the coercivivity mechanism .High resolution electron microscopy ( HREM ) on a Philips CM30 / Super Twin has been used to characterize planar crystal defects in rhombohedral Y2Fe17Cx ( x ≥ 0.6 ). The basal plane stacking sequences are imaged in the [100] - orientation, showing an ABC or ACB sequence of Y - atoms and Fe2 - dumbbells, for both coaxial twin variants, respectively . Compounds resulting from a 3 - week annealing treatment at high temperature ( Ta = 1000 - 1100°C ) contain a high density of planar defects.

Number of Steps Walked Predicts Energy Level, and Mood

2013 ◽  
Author(s):  
Robert E. Thayer ◽  
Olga Godes ◽  
Nicole E. Lobato ◽  
Marcelino Serrano ◽  
Jorge Hernandez ◽  
...  
Keyword(s):  
Energy Level
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