Structural isomerism in the [(Ni@Sn9)In(Ni@Sn9)]5− Zintl ion

A new Zintl cluster, [(Ni@Sn9)In(Ni@Sn9)]5−, has been isolated in two distinct isomeric forms, one where both Ni@Sn9 units are coordinated to the bridging indium atom in an η3- mode, the other where one is η3- and the other η4-.

Influence of vacancies on indium atom distribution in InGaAs and InGaN compounds

It has been theoretically ascertained that for defect-free InGaAs and InGaN compounds the uniform distribution of indium atoms is more energetically preferable than the clustering distribution. The presence of gallium and arsenic vacancy in InGaAs and nitrogen vacancy in InGaN facilitates indium atom clustering distribution. It has been shown that the increase in the indium content in InGaAs and InGaN compounds leads to the decrease of the formation energy of gallium, arsenic and nitrogen vacancies.

A Formation Mechanism of X Level due to an Indium-Carbon Dimer in Silicon

It is known that acceptor-carbon complexes have ionization energies less than those of the corresponding substitutional, separate acceptors in silicon. We present the formation mechanism for a shallower acceptor energy level called an X level that is due to an indium- carbon pair. Ab initio calculation methods were used to evaluate electronic structures and lattice relaxations of silicon with indium, carbon or a carbon-indium dimer. The results shows that the bonding interaction between the 5p orbitals of the indium atom and the 3sp orbitals of the silicon atoms bound with the indium atom mainly determines the ionization energy of the X level, and the ionic bonding interaction of the carbon atomic orbitals with the indium atomic orbitals in the X level enables the bonding interaction of the orbitals between the indium atom and the silicon atom to lower the corresponding indium acceptor level, and then to form the shallower X level.

Investigation of Oxygen Contamination in Indium Nitride Thin Film by X-Ray Absorption Fine Structure

Local structures of indium oxynitride (InON) nano-crystal prepared by reactive gas-timing RF magnetron sputtering technique are under investigation. Since the optical properties of these InON thin films depend on gas-timing ratio, the local structure analysis is needed in order to determine the relation between the gas timing ratio and its optical properties. In this work, InON thinfilm with 30:0 seconds (N2:O2) gas-timings ratio was analyzed for its local structure using X-ray absorption fine structure (XAFS) technique in conjunction with first principle calculation. The results indicate that the crystal structure of the film is wurtzite structure which is a typical structure of InN. However from the results of Auger Electron Spectroscopy (AES), there are oxygen contents in the film. Since XAFS analysis confirmed the 4-fold local structure of Indium atom, these oxygen atoms must be substituted in nitrogen sites with slightly changing the local structure of Indium atom. The best fit of XAFS data indicated that there is an oxygen atom substituted in nitrogen site of the 4-fold indium.