scholarly journals Three-Dimensional Integrated Circuits Design for Thousand-Core Processors: From Aspect of Thermal Management

VLSI Design ◽  
10.5772/26916 ◽  
2012 ◽  
Author(s):  
Chiao-Ling Lung ◽  
Jui-Hung Chien ◽  
Yung-Fa Chou ◽  
Ding-Ming Kwai ◽  
Shih-Chieh Chang
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Three Dimensional

Thermal Characterization of Interlayer Microfluidic Cooling of Three-Dimensional Integrated Circuits With Nonuniform Heat Flux

2010 ◽  
Vol 132 (4) ◽  
Author(s):  
Yoon Jo Kim ◽  
Yogendra K. Joshi ◽  
Andrei G. Fedorov ◽  
Young-Joon Lee ◽  
Sung-Kyu Lim
Keyword(s):  
Integrated Circuits ◽  
Mass Flow Rate ◽  
Thermal Management ◽  
Mass Flow ◽  
Flow Rate ◽  
Single Phase ◽  
Hot Spot ◽  
Three Dimensional ◽  
Two Phase ◽  
Two Phase Cooling

It is now widely recognized that the three-dimensional (3D) system integration is a key enabling technology to achieve the performance needs of future microprocessor integrated circuits (ICs). To provide modular thermal management in 3D-stacked ICs, the interlayer microfluidic cooling scheme is adopted and analyzed in this study focusing on a single cooling layer performance. The effects of cooling mode (single-phase versus phase-change) and stack/layer geometry on thermal management performance are quantitatively analyzed, and implications on the through-silicon-via scaling and electrical interconnect congestion are discussed. Also, the thermal and hydraulic performance of several two-phase refrigerants is discussed in comparison with single-phase cooling. The results show that the large internal pressure and the pumping pressure drop are significant limiting factors, along with significant mass flow rate maldistribution due to the presence of hot-spots. Nevertheless, two-phase cooling using R123 and R245ca refrigerants yields superior performance to single-phase cooling for the hot-spot fluxes approaching ∼300 W/cm2. In general, a hybrid cooling scheme with a dedicated approach to the hot-spot thermal management should greatly improve the two-phase cooling system performance and reliability by enabling a cooling-load-matched thermal design and by suppressing the mass flow rate maldistribution within the cooling layer.

Thermoelectric Coolers for Hotspot Thermal Management of 3D Stacked Chips

2011 ◽  
Author(s):  
Matthew Redmond ◽  
Kavin Manickaraj ◽  
Owen Sullivan ◽  
Satish Kumar
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Power Density ◽  
Hot Spot ◽  
Thermal Contact ◽  
Three Dimensional ◽  
Heat Removal ◽  
Thermoelectric Coolers ◽  
Vertical Coupling ◽  
Spot Cooling

Three dimensional (3D) technologies with stacked chips have the potential to provide new chip architecture, improved device density, performance, efficiency, and bandwidth. Their increased power density also can become a daunting challenge for heat removal. Furthermore, power density can be highly non-uniform leading to time and space varying hotspots which can severely affect performance and reliability of the integrated circuits. Thus, it is important to mitigate thermal gradients on chip while considering the associated cooling costs. One method of thermal management currently under investigation is the use of superlattice thermoelectric coolers (TECs) which can be employed for on demand and localized cooling. In this paper, a detailed 3D thermal model of a stacked electronic package with two dies and four ultrathin integrated TECs is studied in order to investigate the efficacy of TECs in hot spot cooling for a 3D technology. We observe up to 14.6 °C of cooling at a hot spot inside the package by TECs. A strong vertical coupling has been observed between the TECs located in top and bottom dies. Bottom TECs can detrimentally heat the top hotspots in both steady state and transient operation. TECs need to be carefully placed inside the package to avoid such undesired heating. Thermal contact resistances between dies, inside the TEC module, and between the TEC and heat spreader are shown to have a crucial effect on TEC performance inside the package. We observed that square root current pulse can provide very efficient short-duration transient cooling at hotspots.

Experimental Analysis Model of an Active Cooling Method for 3D-ICs Utilizing Multidimensional Configured Thermoelectric Coolers

2010 ◽  
Vol 132 (2) ◽  
Author(s):  
Huy N. Phan ◽  
Dereje Agonafer
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Heat Dissipation ◽  
Three Dimensional ◽  
Analysis Model ◽  
Thermoelectric Coolers ◽  
Active Cooling ◽  
3D Ics ◽  
Cooling Method ◽  
Memory Applications

Presently, stack dice are used widely as low-power memory applications because thermal management of 3D architecture such as high-power processors inherits many thermal challenges. Inadequate thermal management of three-dimensional integrated circuits (3D-ICs) leads to reduction in performance, reliability, and ultimately system catastrophic failure. Heat dissipation of 3D systems is highly nonuniform and nonunidirectional due to many factors such as power architectures, transistors packing density, and real estate available on the chip. In this study, the development of an experimental model of an active cooling method to cool a 25 W stack-dice to approximately 13°C utilizing a multidimensional configured thermoelectric will be presented.

Design Guideline to Improve Thermal Management of 3D Package Using Cu-to-Cu Direct Bonding

2015 ◽  
Author(s):  
Ah-Young Park ◽  
S. B. Park
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Thermal Loading ◽  
Three Dimensional ◽  
Design Guidelines ◽  
Element Analysis ◽  
Design Guideline ◽  
Management Perspective ◽  
3D Packaging ◽  
3D Package

Three-dimensional (3D) packaging technology is directly related to the increasing I/O number as stacking chips. This technology has the potential to produce integrated circuits with a much better combination of cost, functionality, performance and power consumption. However, stacked chips raise several thermal issues that need to be addressed and eliminated. In this study, a quantitative study of the conventional solder-based interconnection is conducted based on many different cases of thermal loading, using finite element analysis (FEA). This preliminary study clearly shows limitation of the solder-based interconnection in the thermal management perspective. Underfill for microbμmp acts as a barrier of heat transfer in the conventional 3D stacked chip packages. Therefore, as an alternative, Cu-to-Cu direct bonding (CuDB), which has a better thermal conductivity, is proposed. Its parametric study is performed under the same/different loading conditions and dimensions. This study helps to highlight the thermal behavior of 3D packages consisting of various interconnections. Finally, based on the results, we can propose qualitative design guidelines of 3D packaging depending on various environment and conditions.

A Review of Recent Advances in Thermal Management in Three Dimensional Chip Stacks in Electronic Systems

2011 ◽  
Vol 133 (4) ◽  
Author(s):  
Vikram Venkatadri ◽  
Bahgat Sammakia ◽  
Krishnaswami Srihari ◽  
Daryl Santos
Keyword(s):  
Thermal Analysis ◽  
Integrated Circuits ◽  
Thermal Management ◽  
Management Strategies ◽  
Research Work ◽  
Experimental Studies ◽  
Three Dimensional ◽  
3D Integration ◽  
The Past ◽  
Planar Circuits

Three dimensional (3D) integration offers numerous electrical advantages like shorter interconnection distances between different dies in the stack, reduced signal delay, reduced interconnect power and design flexibilities. The main enabler of 3D integration is through-silicon-vias (TSVs) and stacking of multiple dies. Irrespective of these advantages, thermal management in 3D stacks poses significant challenges for the implementation of 3D integrated circuits. Even though extensive research work has been done in understanding the thermal management in two dimensional (2D) planar circuits for the past several decades, 3D integration offers a new set of challenges in terms of thermal management, which makes it difficult to readily apply the thermal management strategies available for 2D planar circuits. Over the past decade, some work has been done in thermal analysis and management of 3D stacks but still, knowledge is scattered and a comprehensive understanding is lacking. This research work focuses on bringing together the limited work on thermal analysis and thermal management in 3D vertically integrated circuits available in the literature. A compilation and analysis of the results from investigations on thermal management in 3D stacks is presented in this review with special emphasis on experimental studies conducted on different thermal management strategies. Furthermore, 3D integration technologies, thermal management challenges, and advanced 2D thermal management solutions are discussed.

Benchmarking Study on the Thermal Management Landscape for Three-Dimensional Integrated Circuits: From Back-Side to Volumetric Heat Removal

2016 ◽  
Vol 138 (1) ◽  
Author(s):  
Thomas Brunschwiler ◽  
Arvind Sridhar ◽  
Chin Lee Ong ◽  
Gerd Schlottig
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Integrated Circuit ◽  
Power Dissipation ◽  
High Performance ◽  
Heat Dissipation ◽  
Hybrid Approach ◽  
Three Dimensional ◽  
Heat Removal ◽  
Back Side

An overview of the thermal management landscape with focus on heat dissipation from three-dimensional (3D) chip stacks is provided in this study. Evolutionary and revolutionary topologies, such as single-side, dual-side, and finally, volumetric heat removal, are benchmarked with respect to a high-performance three-tier chip stack with an aggregate power dissipation of 672 W. The thermal budget of 50 K can be maintained by three topologies, namely: (1) dual-side cooling, implemented by a thermally active interposer, (2) interlayer cooling with four-port fluid delivery and drainage at 100 kPa pressure drop, and (3) a hybrid approach combining interlayer with embedded back-side cooling. Of all the heat-removal concepts, interlayer cooling is the only approach that scales with the number of dies in the chip stack and hence enables extreme 3D integration. However, the required size of the microchannels competes with the requirement of low through-silicon-via (TSV) heights and pitches. A scaling study was performed to derive the TSV pitch that is compatible with cooling channels to dissipate 150 W/cm2 per tier. An active integrated circuit (IC) area of 4 cm2 was considered, which had to be implemented on the varying tier count in the stack. A cuboid form factor of 2 mm × 4 mm × 2.55 mm results from a die count of 50. The resulting microchannels of 2 mm length allow small hydraulic diameters and thus a very high TSV density of 1837 1/mm2. The accumulated heat flux and the volumetric power dissipation are as high as 7.5 kW/cm2 and 29 kW/cm3, respectively.

scholarly journals Thermal management of three-dimensional integrated circuits with special structures

2021 ◽  
pp. 109-109
Author(s):  
Kang-Jia Wang ◽  
Cui-Ling Li
Keyword(s):  
Temperature Distribution ◽  
Integrated Circuits ◽  
Heat Source ◽  
Thermal Management ◽  
Integrated Circuit ◽  
Three Dimensional ◽  
Numerical Approach ◽  
Optimal Structure ◽  
Maximum Temperature ◽  
Three Dimensional Integrated Circuit

Different stacked structures affect greatly the temperature distribution of a three-dimensional integrated circuit(3-D IC), and an optimal structure is much needed to reduce the maximal temperature. This paper suggests a numerical approach to such structures with different heat source distributions. The results show that an optimal stacked structure can reduce the maximum temperature by 8.7?C.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

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