scholarly journals Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film

10.5772/16405 ◽  
2011 ◽  
Author(s):  
Chien-Min Cheng ◽  
Kai-Huang Chen ◽  
Chun-Cheng Lin ◽  
Ying-Chung Chen ◽  
Chih-Sheng Chen ◽  
...  
2004 ◽  
Vol 449-452 ◽  
pp. 353-356
Author(s):  
Hyoun Woo Kim

The usage of barium strontium titanate (BST) capacitor have recently been considered in the fabrication of dynamic random access memory (DRAM) device. In this study, in order to avoid the difficulties of high aspect ratio etching of bottom electrode in the conventional stack-typecapacitor structure, we suggest to introduce a concave-type capacitor structure. The fabrication procedure of the two kinds of the concave capacitor cells, Pt/BST/Pt and Ru/BST/Ru are explained. We have studied on the metal electrode etching in the concave structure and have discussed the patterning issues in fabricating the capacitor structures.


1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 578-580 ◽  
Author(s):  
Youngjoo Yee ◽  
Sanggi Yu ◽  
Kukjin Chun ◽  
Jong Duk Lee

2013 ◽  
Vol 14 (2) ◽  
pp. 505-510 ◽  
Author(s):  
D. Mao ◽  
I. Mejia ◽  
A.L. Salas-Villasenor ◽  
M. Singh ◽  
H. Stiegler ◽  
...  

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