High-efficiency magnetic modulation in Ti/ZnO/Pt resistive random-access memory devices using amorphous zinc oxide film

2019 ◽  
Vol 488 ◽  
pp. 92-97 ◽  
Author(s):  
Shuxia Ren ◽  
Weichao Dong ◽  
Hao Tang ◽  
Lingzhi Tang ◽  
Zhenhua Li ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Oxide Film ◽  
High Efficiency ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Zinc Oxide Film ◽  
Access Memory

scholarly journals Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

2015 ◽  
Vol 51 (44) ◽  
pp. 9173-9176 ◽  
Author(s):  
Sung Pyo Park ◽  
Doo Hyun Yoon ◽  
Young Jun Tak ◽  
Heesoo Lee ◽  
Hyun Jae Kim
Keyword(s):  
Phase Transition ◽  
Hydrogen Peroxide ◽  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Switching Characteristics

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnOx) resistive random access memory (RRAM) devices using hydrogen peroxide.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Low switching-threshold-voltage zinc oxide nanowire array resistive random access memory

2016 ◽  
Vol 618 ◽  
pp. 90-94 ◽  
Author(s):  
Guan-Hung Shen ◽  
Andrew Ronaldi Tandio ◽  
Mei-Yu Lin ◽  
Gao-Feng Lin ◽  
Kai-Huang Chen ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Threshold Voltage ◽  
Nanowire Array ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Threshold ◽  
Zinc Oxide Nanowire ◽  
Switching Threshold Voltage
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