scholarly journals Strain Effects in p-type Devices using Full-Band Monte Carlo Simulations

10.5772/15524 ◽  
2011 ◽  
Author(s):  
Valerie Aubry-Fortuna ◽  
Karim Huet ◽  
T.T. Trang ◽  
Arnaud Bournel ◽  
Jerome Saint-Martin ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Strain Effects ◽  
Full Band ◽  
P Type

scholarly journals Understanding the Average Electron–Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations

2019 ◽  
Vol 66 (1) ◽  
pp. 444-451 ◽  
Author(s):  
Jingtian Fang ◽  
Mahmud Reaz ◽  
Stephanie L. Weeden-Wright ◽  
Ronald D. Schrimpf ◽  
Robert A. Reed ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Pair Creation ◽  
Hole Pair ◽  
Electron Hole ◽  
Full Band ◽  
Electron Hole Pair ◽  
Average Electron ◽  
Silicon And Germanium

Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

2004 ◽  
Vol 19 (4) ◽  
pp. S206-S208 ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Band Gap ◽  
High Field ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Electron ◽  
Full Band ◽  
Wide Band Gap Semiconductors

Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations

2017 ◽  
Vol 64 (11) ◽  
pp. 4442-4449
Author(s):  
Riccardo Soligo ◽  
Flavio Sabatti ◽  
Srabanti Chowdhury ◽  
Marco Saraniti
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Momentum Space ◽  
Full Band ◽  
Rf Applications

Full-band Monte Carlo simulations of high-field electron transport in GaAs and ZnS

2003 ◽  
Vol 67 (20) ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M. Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
High Field ◽  
Field Electron ◽  
Full Band

scholarly journals The Completed Probabilistic Modelling of Nanometer MIFGMOSFET

2020 ◽  
Vol 14 (2) ◽  
pp. 201-212
Author(s):  
Rawid Banchuin ◽  
Roungsan Chaisrichaoren
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Floating Gate ◽  
Probabilistic Modelling ◽  
Probabilistic Distribution ◽  
Proposed Model ◽  
Multiple Input ◽  
Physical Level ◽  
P Type ◽  
Modelling Process

A completed model of the probabilistic distribution of the drain current’s random variation of the nanometer multiple input floating gate MOSFET (MIFGMOSFET) is proposed in this work. The modelling process has taken the dominant physical level causes of the drain current’s variations into account. Unlike its predecessor, the proposed model considers both N-type and P-type nanometer MIFGMOSFET. Moreover, the formerly neglected parasitic coupling capacitances have also been taken into account. The obtained modelling results, which are based on the derived drain current’s equations of nanometer MIFGMOSFET, are very accurate. They can predict the probabilistic distributions of the candidate N-type and P-type nanometer MIFGMOSFETs obtained by using Monte-Carlo simulations with 99% confidence and higher accuracy than that of the previous work. We also perform a comparative robustness study of the nanometer MIFGMOSFET of both types and demonstrate various interesting applications of our modelling results

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