Full band ensemble monte carlo simulations for reliability investigation of highvoltage single & double heterojunction bipolar transistors for military and base station applications including a proposed high breakdown composite collector design

2005 ◽  
Author(s):  
S. Madra
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Heterojunction Bipolar Transistors ◽  
Base Station ◽  
Bipolar Transistors ◽  
Ensemble Monte Carlo ◽  
Full Band ◽  
Double Heterojunction

17 Gbit/s pin-PD/decision circuit using InP/InGaAs double-heterojunction bipolar transistors

1996 ◽  
Vol 32 (4) ◽  
pp. 393 ◽  
Author(s):  
M. Yoneyama ◽  
E. Sano ◽  
S. Yamahata ◽  
Y. Matsuoka ◽  
M. Yaita
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Decision Circuit

scholarly journals Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications

2021 ◽  
Vol 130 (3) ◽  
pp. 034502
Author(s):  
Xin Wen ◽  
Akshay Arabhavi ◽  
Wei Quan ◽  
Olivier Ostinelli ◽  
Chhandak Mukherjee ◽  
...  
Keyword(s):  
Performance Prediction ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Thz Applications

Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

2009 ◽  
Vol 30 (11) ◽  
pp. 1119-1121 ◽  
Author(s):  
Shyh-Chiang Shen ◽  
Yi-Che Lee ◽  
Hee-Jin Kim ◽  
Yun Zhang ◽  
Suk Choi ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Surface Leakage

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

2004 ◽  
Vol 833 ◽  
Author(s):  
Byoung-Gue Min ◽  
Jong-Min Lee ◽  
Seong-Il Kim ◽  
Chul-Won Ju ◽  
Kyung-Ho Lee
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface States ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Current Gain ◽  
Device Structure ◽  
Double Heterojunction ◽  
Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

scholarly journals Optimized ensemble Monte Carlo simulations of dense Lennard-Jones fluids

2005 ◽  
Vol 123 (20) ◽  
pp. 204501 ◽  
Author(s):  
Simon Trebst ◽  
Emanuel Gull ◽  
Matthias Troyer
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Ensemble Monte Carlo ◽  
Lennard Jones

Gibbs-ensemble Monte Carlo simulation of H2–H2O mixtures

2021 ◽  
Author(s):  
Armin Bergermann ◽  
Martin French ◽  
Ronald Redmer
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Giant Planets ◽  
Gibbs Ensemble ◽  
Miscibility Gap ◽  
Ensemble Monte Carlo ◽  
Ensemble Monte Carlo Simulation ◽  
Gibbs Ensemble Monte Carlo

The miscibility gap in H2–H2O mixtures is investigated by conducting Gibbs-ensemble Monte Carlo simulations. Our results indicate that H2–H2O immiscibility regions may have a significant impact on the structure and evolution of ice giant planets.

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