scholarly journals Monte Carlo Simulation for Ion Implantation Profiles, Amorphous Layer Thickness Formed by the Ion Implantation, and Database Based on Pearson Function

10.5772/14539 ◽  
2011 ◽  
Author(s):  
Kunihiro Suzuki
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Ion Implantation ◽  
Layer Thickness ◽  
Amorphous Layer

Modeling Energy Deposition in Very Thin Layered Media by Monte Carlo Simulation

2007 ◽  
Author(s):  
Reginald Eze ◽  
Anisur Rahman ◽  
Sunil Kumar
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Thin Layer ◽  
Layer Thickness ◽  
Path Length ◽  
Energy Deposition ◽  
Radiation Transport ◽  
Monte Carlo Model ◽  
Layered Media ◽  
Thin Layers

A Monte Carlo model with special features for modeling of radiation transport through very thin layers has been presented. Over the decades traditional Monte Carlo model has been used to model highly scattering thin layers in skin and may inaccurately capture the effect of thin layers since their interfaces are not perfectly planar and thicknesses non-uniform. If the Monte Carlo model is implemented without special features then the results of the simulation would show no effect of the outer thin layer since the path length of most photons would be significantly larger than the layer thickness and the resulting predicted photon travel would simply not notice the presence of the layer. Examples of multi-layered media are considered where the effect of a very thin absorbing layers is systematically examined using both the traditional Monte Carlo and that with new features incorporated. The results have profound implications in the diagnostic and therapeutic applications of laser in biomedicine and surgery.

Mask-Edge Distributions Produced by 80 KeV As+ Ion Implantation Into Si

1996 ◽  
Vol 439 ◽  
Author(s):  
D. Danailov ◽  
D. Karpuzov ◽  
A. Almazouzi ◽  
P.De Almeida ◽  
M. Victoria
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Simple Model ◽  
Ion Implantation ◽  
Computer Code ◽  
Target Atom ◽  
Mask Edge ◽  
Computer Procedure

AbstractThe 2D-dopant and defect distributions resulting from 80 keV ion implantation of As+ ions into Si through a high-edge mask are presented. The distributions are obtained by means of an efficient computer procedure using the results of Monte Carlo simulation. Two versions of the computer code TRIM are used. The 2D-target atom redistribution is obtained as a result of cascade collisions. The simulation reveals the effect of near-mask-edge target atom depletion. This effect is related to the recoil phenomena and can be explained on the basis of simple model.

Analytical Model of Amorphous Layer Thickness Formed by High-Tilt-Angle As Ion Implantation

2008 ◽  
Vol 55 (4) ◽  
pp. 1080-1084
Author(s):  
Kunihiro Suzuki ◽  
Yoko Tada ◽  
Yuji Kataoka ◽  
Kazuo Kawamura ◽  
Tsutomu Nagayama
Keyword(s):  
Ion Implantation ◽  
Layer Thickness ◽  
Analytical Model ◽  
Tilt Angle ◽  
Amorphous Layer
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