scholarly journals Functional representation for the grand partition function of a multicomponent system of charged particles: Correlation functions of the reference system

2006 ◽  
Vol 9 (4) ◽  
pp. 659 ◽  
Author(s):  
Patsahan ◽  
Mryglod
Keyword(s):  
Partition Function ◽  
Correlation Functions ◽  
Reference System ◽  
Multicomponent System ◽  
Charged Particles ◽  
Grand Partition Function ◽  
Functional Representation

A non-perturbative path-integral based thermal cluster expansion approach for grand partition function of quantum systems

2002 ◽  
Vol 352 (1-2) ◽  
pp. 63-69 ◽  
Author(s):  
Sheikh Hannan Mandal ◽  
Rathindranath Ghosh ◽  
Goutam Sanyal ◽  
Debashis Mukherjee
Keyword(s):  
Partition Function ◽  
Path Integral ◽  
Cluster Expansion ◽  
Quantum Systems ◽  
Grand Partition Function

A non-perturbative cumulant expansion method for the grand partition function of quantum systems

2001 ◽  
Vol 335 (3-4) ◽  
pp. 281-288 ◽  
Author(s):  
Sheikh Hannan Mandal ◽  
Rathindranath Ghosh ◽  
Debashis Mukherjee
Keyword(s):  
Partition Function ◽  
Expansion Method ◽  
Quantum Systems ◽  
Grand Partition Function ◽  
Cumulant Expansion

The occupancy of the threading dislocation lines within n-type gallium nitride: Recent progress

2012 ◽  
Vol 1432 ◽  
Author(s):  
Erfan Baghani ◽  
Stephen K. O’Leary
Keyword(s):  
Gallium Nitride ◽  
Partition Function ◽  
Recent Progress ◽  
Threading Dislocation ◽  
Grand Partition Function ◽  
Dangling Bond ◽  
Large Role ◽  
Defect Sites ◽  
Dislocation Defect ◽  
Defect Energy Level

ABSTRACTWithin the framework of a grand partition function formalism, we examine the occupancy of the dangling bond dislocation defect sites and the VGa-ON dislocation defect sites within uncompensated n-type gallium nitride. The sensitivity of these results to variations in the unoccupied dislocation defect energy level is examined. We find that the VGa-ON dislocation defect sites’ greater capacity to store charge plays a large role in influencing the results, i.e., greater free electron and bulk donor concentrations are required in order to fully saturate the threading dislocation lines with charge.

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