The occupancy of the threading dislocation lines within n-type gallium nitride: Recent progress

2012 ◽  
Vol 1432 ◽  
Author(s):  
Erfan Baghani ◽  
Stephen K. O’Leary
Keyword(s):  
Gallium Nitride ◽  
Partition Function ◽  
Recent Progress ◽  
Threading Dislocation ◽  
Grand Partition Function ◽  
Dangling Bond ◽  
Large Role ◽  
Defect Sites ◽  
Dislocation Defect ◽  
Defect Energy Level

ABSTRACTWithin the framework of a grand partition function formalism, we examine the occupancy of the dangling bond dislocation defect sites and the VGa-ON dislocation defect sites within uncompensated n-type gallium nitride. The sensitivity of these results to variations in the unoccupied dislocation defect energy level is examined. We find that the VGa-ON dislocation defect sites’ greater capacity to store charge plays a large role in influencing the results, i.e., greater free electron and bulk donor concentrations are required in order to fully saturate the threading dislocation lines with charge.

Electron mobility limited by scattering from threading dislocation lines within gallium nitride

2016 ◽  
Vol 30 (09) ◽  
pp. 1650050
Author(s):  
Seyed Mohammad Alavi ◽  
Erfan Bagani
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
Unit Length ◽  
Dislocation Line ◽  
Experimental Studies ◽  
Opposite Polarity ◽  
Threading Dislocation ◽  
Text Type ◽  
The Core ◽  
Defect Sites

Theoretical as well as experimental studies in the literature suggest that defect sites associated with the threading dislocation lines within [Formula: see text]-type gallium nitride (GaN) act to trap free electrons from the bulk of this semiconductor material. As a result, the core of the threading dislocation lines become negatively charged. The charge accumulated along the core of a threading dislocation line should be screened by a charge of opposite polarity and equal in absolute value per unit length along the dislocation line. In the present work, we model this screened charge buildup along the threading dislocation lines by two concentric space-charge cylinders. Quantum mechanical theory of scattering in cylindrical coordinates is then employed in order to numerically compute the electron mobility limited by scattering from the charged threading dislocation lines. The dependence of the computed electron mobility on the dislocation line density and on the amount of charge accumulated per unit length along the core of the dislocation lines is also investigated in this work. Our computed electron mobility results are compared with results from existing calculations of the GaN dislocation scattering limited electron mobility in the literature.

A non-perturbative path-integral based thermal cluster expansion approach for grand partition function of quantum systems

2002 ◽  
Vol 352 (1-2) ◽  
pp. 63-69 ◽  
Author(s):  
Sheikh Hannan Mandal ◽  
Rathindranath Ghosh ◽  
Goutam Sanyal ◽  
Debashis Mukherjee
Keyword(s):  
Partition Function ◽  
Path Integral ◽  
Cluster Expansion ◽  
Quantum Systems ◽  
Grand Partition Function

A non-perturbative cumulant expansion method for the grand partition function of quantum systems

2001 ◽  
Vol 335 (3-4) ◽  
pp. 281-288 ◽  
Author(s):  
Sheikh Hannan Mandal ◽  
Rathindranath Ghosh ◽  
Debashis Mukherjee
Keyword(s):  
Partition Function ◽  
Expansion Method ◽  
Quantum Systems ◽  
Grand Partition Function ◽  
Cumulant Expansion

scholarly journals Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 575 ◽  
Author(s):  
Yue Sun ◽  
Xuanwu Kang ◽  
Yingkui Zheng ◽  
Jiang Lu ◽  
Xiaoli Tian ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Schottky Barrier ◽  
High Power ◽  
High Frequency ◽  
Recent Progress ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

THERMODYNAMICS OF q-MODIFIED BOSONS

1996 ◽  
Vol 10 (06) ◽  
pp. 683-699 ◽  
Author(s):  
P. NARAYANA SWAMY
Keyword(s):  
Mechanical Properties ◽  
Phase Transition ◽  
Equation Of State ◽  
Partition Function ◽  
Statistical Mechanics ◽  
Specific Heat ◽  
Thermodynamic Functions ◽  
Bose Condensation ◽  
Grand Partition Function ◽  
Statistical Mechanical

Based on a recent study of the statistical mechanical properties of the q-modified boson oscillators, we develop the statistical mechanics of the q-modified boson gas, in particular the Grand Partition Function. We derive the various thermodynamic functions for the q-boson gas including the entropy, pressure and specific heat. We demonstrate that the gas exhibits a phase transition analogous to ordinary bose condensation. We derive the equation of state and develop the virial expansion for the equation of state. Several interesting properties of the q-boson gas are derived and compared with those of the ordinary boson which may point to the physical relevance of such systems.

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