Intrinsic Restructuring of Defects in Amorphous SiO2 in Manipulating Electron-Trapping Levels via First Principles Study

A model of undefected and defected amorphous SiO2 has been constructed from Rietveld Refinement to investigate the effect of defect structure to its properties. Atomic level study for both structure were carried out using plane-wave pseudo potential by density functional theory. A new electrons trapping energy level appears within the 5.853eV band gap of a-SiO2 for oxygen-excess defected structure. This defect energy level reduces as more number of excess oxygen atoms was added to the structure of a-SiO2. A spectral emission at 388nm from SiO2 glass excited with 350nm (200mW) laser demonstrates the existence of the defective states in the structure in trapping electron at 3.273eV energy level.

The occupancy of the threading dislocation lines within n-type gallium nitride: Recent progress

ABSTRACTWithin the framework of a grand partition function formalism, we examine the occupancy of the dangling bond dislocation defect sites and the VGa-ON dislocation defect sites within uncompensated n-type gallium nitride. The sensitivity of these results to variations in the unoccupied dislocation defect energy level is examined. We find that the VGa-ON dislocation defect sites’ greater capacity to store charge plays a large role in influencing the results, i.e., greater free electron and bulk donor concentrations are required in order to fully saturate the threading dislocation lines with charge.

Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC

The understanding of the structure and associated defect level of point defects in SiC is important because the material is to be used both as a semiconductor and semi-insulator. Production of the latter is achieved by compensation of unavoidable impurities using defects that require more energy for ionization than the unintentional donors or acceptors. The purpose of the present work is to measure the defect energy level of one center in high resistivity 4H SiC using photo-induced electron paramagnetic resonance (photo-EPR). The center is identified as SI-5, an EPR signal that others have attributed to the negative charge state of the carbon vacancy-carbon antisite pair, − C Si V C . Samples containing this defect exhibit two different photo thresholds, which depend on the resistivity activation energy, Ea. For samples with Ea less than 0.8 eV, a photothreshold at 0.75+/- 0.05 eV is observed, but for those with Ea greater than 0.8 eV, the threshold is between 2 and 2.5 eV. Previous work focused on the former case. Here, the SiC substrates with the larger Ea are emphasized, showing that the photo-threshold likely measures the neutral to negative defect level, − / 0 C Si V C .