Functional of the grand partition function in the method of collective variables with distinguished reference system. Multicomponent system

1990 ◽  
Vol 83 (1) ◽  
pp. 387-395 ◽  
Author(s):  
O. V. Patsagan ◽  
I. R. Yukhnovskii
Keyword(s):  
Partition Function ◽  
Reference System ◽  
Multicomponent System ◽  
Grand Partition Function ◽  
Collective Variables

Investigation in the Vicinity of the Critical Point

1988 ◽  
Vol 43 (8-9) ◽  
pp. 734-740
Author(s):  
I. R. Yukhnovskii
Keyword(s):  
Critical Temperature ◽  
Partition Function ◽  
Critical Point ◽  
Explicit Form ◽  
Reference System ◽  
Chemical Potential ◽  
Critical Density ◽  
Collective Variables ◽  
Potential Surfaces

Abstract It is shown that the events occuring in the vicinity of the critical point can be described in full by means of the collective variables with the appropriate reference system. The partition function containing the explicit form for the quartic measure density is obtained and integrated. Expressions for the critical temperature, critical density and critical chemical potential surfaces are calculated.

A non-perturbative path-integral based thermal cluster expansion approach for grand partition function of quantum systems

2002 ◽  
Vol 352 (1-2) ◽  
pp. 63-69 ◽  
Author(s):  
Sheikh Hannan Mandal ◽  
Rathindranath Ghosh ◽  
Goutam Sanyal ◽  
Debashis Mukherjee
Keyword(s):  
Partition Function ◽  
Path Integral ◽  
Cluster Expansion ◽  
Quantum Systems ◽  
Grand Partition Function

A non-perturbative cumulant expansion method for the grand partition function of quantum systems

2001 ◽  
Vol 335 (3-4) ◽  
pp. 281-288 ◽  
Author(s):  
Sheikh Hannan Mandal ◽  
Rathindranath Ghosh ◽  
Debashis Mukherjee
Keyword(s):  
Partition Function ◽  
Expansion Method ◽  
Quantum Systems ◽  
Grand Partition Function ◽  
Cumulant Expansion

The occupancy of the threading dislocation lines within n-type gallium nitride: Recent progress

2012 ◽  
Vol 1432 ◽  
Author(s):  
Erfan Baghani ◽  
Stephen K. O’Leary
Keyword(s):  
Gallium Nitride ◽  
Partition Function ◽  
Recent Progress ◽  
Threading Dislocation ◽  
Grand Partition Function ◽  
Dangling Bond ◽  
Large Role ◽  
Defect Sites ◽  
Dislocation Defect ◽  
Defect Energy Level

ABSTRACTWithin the framework of a grand partition function formalism, we examine the occupancy of the dangling bond dislocation defect sites and the VGa-ON dislocation defect sites within uncompensated n-type gallium nitride. The sensitivity of these results to variations in the unoccupied dislocation defect energy level is examined. We find that the VGa-ON dislocation defect sites’ greater capacity to store charge plays a large role in influencing the results, i.e., greater free electron and bulk donor concentrations are required in order to fully saturate the threading dislocation lines with charge.

Sign in / Sign up

Export Citation Format

Share Document