Laplace transform deep level transient spectroscopic study on PLD grown ZnO

2015 ◽  
Author(s):  
Lok-ping Ho
Keyword(s):  
Laplace Transform ◽  
Spectroscopic Study ◽  
Deep Level

Laplace-transform deep-level transient spectroscopy studies of the G4 gold–hydrogen complex in silicon

1998 ◽  
Vol 73 (21) ◽  
pp. 3126-3128 ◽  
Author(s):  
P. Deixler ◽  
J. Terry ◽  
I. D. Hawkins ◽  
J. H. Evans-Freeman ◽  
A. R. Peaker ◽  
...  
Keyword(s):  
Laplace Transform ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

scholarly journals Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal

2011 ◽  
Vol 26 (9) ◽  
pp. 095016 ◽  
Author(s):  
Z R Ye ◽  
X H Lu ◽  
G W Ding ◽  
S Fung ◽  
C C Ling ◽  
...  
Keyword(s):  
Single Crystal ◽  
Spectroscopic Study ◽  
Deep Level ◽  
Zno Single Crystal

Laplace Transform Deep Level Transient Spectroscopy Study of the EH6/7 Center

2013 ◽  
Vol 740-742 ◽  
pp. 645-648 ◽  
Author(s):  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
Laplace Transform ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dose Dependence ◽  
Conduction Band Edge ◽  
Emission Rates ◽  
Energy Position ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
Electric Filed

We employed Laplace transform deep level transient spectroscopy (LDLTS) for the resolution of the EH6/7 center in n-type 4H-SiC epilayers. Our results suggest that this technique is effective in separating the emission rates of the EH6 and EH7 levels. From the Arrhenius dependence of the emission rates we could estimate the energy position of EH6 and EH7 as 1.39 and 1.49 eV below the minimum of the conduction band edge, respectively. Generation of of EH6 and EH7 centers by low-energy electron irradiation (dose dependence) was also investigated. At last, a double pulse Laplace DLTS is performed in order to show the electric filed dependence of the emission rates of EH6 and EH7.

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