Conductance Deep-Level Transient Spectroscopic Study of 4H- SiC MESFET and Traps

Deep level transient spectroscopic study of DX center in heavily doped ion-implanted GaAs

Solid State Communications ◽

10.1016/0038-1098(95)00322-3 ◽

1996 ◽

Vol 98 (2) ◽

pp. 195-199 ◽

Cited By ~ 2

Author(s):

Subhasis Ghosh ◽

Vikram Kumar

Keyword(s):

Spectroscopic Study ◽

Deep Level ◽

Dx Center ◽

Heavily Doped ◽

Ion Implanted

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Deep level transient spectroscopic study of nitrogen-implanted ZnO single crystal

10.5353/th_b4554159 ◽

2010 ◽

Author(s):

Guangwei Ding

Keyword(s):

Single Crystal ◽

Spectroscopic Study ◽

Deep Level ◽

Zno Single Crystal

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Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal

Semiconductor Science and Technology ◽

10.1088/0268-1242/26/9/095016 ◽

2011 ◽

Vol 26 (9) ◽

pp. 095016 ◽

Cited By ~ 4

Author(s):

Z R Ye ◽

X H Lu ◽

G W Ding ◽

S Fung ◽

C C Ling ◽

...

Keyword(s):

Single Crystal ◽

Spectroscopic Study ◽

Deep Level ◽

Zno Single Crystal

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Laplace transform deep level transient spectroscopic study on PLD grown ZnO

10.5353/th_b5481905 ◽

2015 ◽

Author(s):

Lok-ping Ho

Keyword(s):

Laplace Transform ◽

Spectroscopic Study ◽

Deep Level

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Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x⩾3% grown by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.12.100 ◽

2005 ◽

Vol 278 (1-4) ◽

pp. 575-579

Author(s):

T.S. Lay ◽

E.Y. Lin ◽

C.Y. Chang ◽

K.M. Kong ◽

L.P. Chen ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Spectroscopic Study ◽

Molecular Beam ◽

Deep Level ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures

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A deep level transient spectroscopic study of boron-ion-implanted single quantum wells

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/9/16/014 ◽

1997 ◽

Vol 9 (16) ◽

pp. 3427-3433

Author(s):

Fang Lu ◽

Jianbao Wang ◽

Jiayu Jiang ◽

Dawei Gong ◽

Henghui Sun ◽

...

Keyword(s):

Spectroscopic Study ◽

Quantum Wells ◽

Deep Level ◽

Single Quantum ◽

Ion Implanted

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Conductance deep-level transient spectroscopic study of anomalous hole trap in GaAs MESFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/13/10/007 ◽

1998 ◽

Vol 13 (10) ◽

pp. 1094-1099 ◽

Cited By ~ 7

Author(s):

V R Balakrishnan ◽

Vikram Kumar ◽

Subhasis Ghosh

Keyword(s):

Spectroscopic Study ◽

Deep Level ◽

Hole Trap

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Deep level transient spectroscopic study of neutron-irradiated n-type 6H–SiC

Journal of Applied Physics ◽

10.1063/1.1598629 ◽

2003 ◽

Vol 94 (5) ◽

pp. 3004-3010 ◽

Cited By ~ 25

Author(s):

X. D. Chen ◽

S. Fung ◽

C. C. Ling ◽

C. D. Beling ◽

M. Gong

Keyword(s):

Spectroscopic Study ◽

Deep Level

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Deep level transient spectroscopic study of intrinsic defects in particle-irradiated ZnO single crystal materials

10.5353/th_b4786991 ◽

2012 ◽

Author(s):

Xiaohong Lu

Keyword(s):

Single Crystal ◽

Spectroscopic Study ◽

Deep Level ◽

Intrinsic Defects ◽

Zno Single Crystal

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Some Results of the Spectroscopic Study of Four Close Binary Systems of Early Spectral Types

International Astronomical Union Colloquium ◽

10.1017/s025292110002755x ◽

1965 ◽

Vol 5 ◽

pp. 120-130

Author(s):

T. S. Galkina

Keyword(s):

Spectroscopic Study ◽

Spectral Type ◽

Spectroscopic Investigation ◽

Binary Systems ◽

Quantitative Information ◽

Close Binary ◽

Physical Parameters ◽

Absorption And Emission ◽

Close Binary Systems ◽

Quantitative Estimates

It is necessary to have quantitative estimates of the intensity of lines (both absorption and emission) to obtain the physical parameters of the atmosphere of components.Some years ago at the Crimean observatory we began the spectroscopic investigation of close binary systems of the early spectral type with components WR, Of, O, B to try and obtain more quantitative information from the study of the spectra of the components.

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