Deep level transient spectroscopic study of nitrogen-implanted ZnO single crystal

2010 ◽  
Author(s):  
Guangwei Ding
Keyword(s):  
Single Crystal ◽  
Spectroscopic Study ◽  
Deep Level ◽  
Zno Single Crystal

scholarly journals Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal

2011 ◽  
Vol 26 (9) ◽  
pp. 095016 ◽  
Author(s):  
Z R Ye ◽  
X H Lu ◽  
G W Ding ◽  
S Fung ◽  
C C Ling ◽  
...  
Keyword(s):  
Single Crystal ◽  
Spectroscopic Study ◽  
Deep Level ◽  
Zno Single Crystal

Photoelectron spectroscopic study on monolayer pentacene thin-film/polar ZnO single-crystal hybrid interface

2017 ◽  
Vol 10 (2) ◽  
pp. 025702 ◽  
Author(s):  
Takahiro Nagata ◽  
Tatsuru Nakamura ◽  
Ryoma Hayakawa ◽  
Takeshi Yoshimura ◽  
Seungjun Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Spectroscopic Study ◽  
Zno Single Crystal ◽  
Hybrid Interface

Deep-level defects study of arsenic-implanted ZnO single crystal

2009 ◽  
Vol 40 (2) ◽  
pp. 286-288 ◽  
Author(s):  
C.Y. Zhu ◽  
C.C. Ling ◽  
G. Brauer ◽  
W. Anwand ◽  
W. Skorupa
Keyword(s):  
Single Crystal ◽  
Deep Level ◽  
Zno Single Crystal

Preparation and electrical properties of heterojunctions of ZnO on Zn3P2 and CdTe

1989 ◽  
Vol 67 (4) ◽  
pp. 448-455 ◽  
Author(s):  
M. Ginting ◽  
J. D. Leslie
Keyword(s):  
Single Crystal ◽  
Deep Level ◽  
Photovoltaic Performance ◽  
Polycrystalline Film ◽  
Metal Insulator ◽  
Measurement And Analysis ◽  
Transient Spectroscopy ◽  
P Type ◽  
Zno Single Crystal ◽  
High Series

"Heterojunctions" have been fabricated by the reactive evaporation of thin film n-type ZnO onto p-type single crystal Zn3P2, polycrystalline films of Zn3P2, and single crystal CdTe. The photovoltaic response of the n-ZnO – single crystal p-CdTe devices was good, that of the n-ZnO – single crystal p-Zn3P2 devices was poor, and that of the n-ZnO – p-Zn3P2 polycrystalline film devices was nonexistent. The ideality factor n of all devices studied was greater than two. On the basis of 1/C2 vs. V results, the n-ZnO – single crystal p-Zn3P2 devices behaved most like Schottky barrier devices, whereas the n-ZnO – p-Zn3P2 polycrystalline film devices, and the n-ZnO – p-single crystal CdTe "heterojunctions" behaved most like metal–insulator–semiconductor devices. The high series resistance of all devices had to be considered in the measurement and analysis, and it limited the photovoltaic performance. Deep-level transient spectroscopy measurements indicated majority (hole) traps in the CdTe and Zn3P2 with activation energies in agreement with previous measurements in the literature.

A DLTS study of a ZnO microwire, a thin film and bulk material

2014 ◽  
Vol 1633 ◽  
pp. 51-54
Author(s):  
Florian Schmidt ◽  
Peter Schlupp ◽  
Stefan Müller ◽  
Christof Peter Dietrich ◽  
Holger von Wenckstern ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Deep Level ◽  
Bulk Material ◽  
Intrinsic Defect ◽  
Growth Technique ◽  
Current Voltage ◽  
Common Opinion ◽  
Transient Spectroscopy ◽  
Zno Single Crystal

ABSTRACTWe have investigated the electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition on an a-plane sapphire, and a hydrothermally grown Zn-face ZnO single crystal (Tokyo Denpa Co. Ltd.). The samples were investigated by means of current-voltage measurements, capacitance-voltage measurements, and deep-level transient spectroscopy.The defects T2 [1,2] and E3 [1,3,4] were identified in all three sample types. Additionally, in the single crystal and thin film samples E64 [5] and E4 [1] were detected. These findings support the common opinion that T2 is an intrinsic defect since it is found in all the samples investigated and thus its occurrence is not related to any growth technique.

Native deep level defects in ZnO single crystal grown by CVT method

2007 ◽  
Author(s):  
Youwen Zhao ◽  
Fan Zhang ◽  
Rui Zhang ◽  
Zhiyuan Dong ◽  
Xuecheng Wei ◽  
...  
Keyword(s):  
Single Crystal ◽  
Deep Level ◽  
Zno Single Crystal

Iron in kornerupine; a57Fe Moessbauer spectroscopic study and comparison with single-crystal structure refinement

1999 ◽  
Vol 84 (4) ◽  
pp. 536-549 ◽  
Author(s):  
Edward S. Grew ◽  
Guenther J. Redhammer ◽  
Georg Amthauer ◽  
Mark A. Cooper ◽  
Frank C. Hawthorne ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Single Crystal ◽  
Spectroscopic Study ◽  
Structure Refinement ◽  
Single Crystal Structure ◽  
Crystal Structure Refinement

Spectroscopic study of the TbAl3(BO3)4 single crystal: Raman and luminescence spectroscopy

2020 ◽  
Vol 46 (12) ◽  
pp. 1223-1230
Author(s):  
A. V. Peschanskii ◽  
A. Yu. Glamazda ◽  
I. A. Gudim
Keyword(s):  
Single Crystal ◽  
Spectroscopic Study ◽  
Luminescence Spectroscopy
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