A study on high-k dielectrics for discrete charge-trapping flash memory applications

2013 ◽  
Author(s):  
Xiaodong Huang
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
High K ◽  
Memory Applications ◽  
Discrete Charge

scholarly journals Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 799 ◽  
Author(s):  
Jer Wang ◽  
Chyuan Kao ◽  
Chien Wu ◽  
Chun Lin ◽  
Chih Lin
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Dielectric Constants ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Hysteresis Curve ◽  
Band Shift ◽  
K Value ◽  
High K

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb2O5 and Ti-doped Nb2O5(TiNb2O7) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆VFB) window of the TiNb2O7 charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb2O7 nano-layer is because of a better electrical and structural performance, compared to the Nb2O5 nano-layer.

A high-k Y2TiO5 charge trapping layer for high-density flash memory application

2007 ◽  
Author(s):  
Tung-Ming Pan ◽  
Wen-Wei Yeh ◽  
Wei-Tsung Chang ◽  
Kai-Ming Chen ◽  
Jing-Wei Chen ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
High Density ◽  
High K

Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications

2014 ◽  
Vol 94 ◽  
pp. 51-55 ◽  
Author(s):  
Pyung Moon ◽  
Jun Yeong Lim ◽  
Tae-Un Youn ◽  
Sung-Kye Park ◽  
Ilgu Yun
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Field Dependent ◽  
Memory Applications

Improved Device Characteristics in Charge-Trapping-Engineered Flash Memory Using High-k Dielectrics

2019 ◽  
Vol 25 (6) ◽  
pp. 447-455 ◽  
Author(s):  
Albert Chin ◽  
S. H. Lin ◽  
C. Y. Tsai ◽  
F. S. Yeh
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
High K

A MONOS-Type Flash Memory Using a High-k HfAlO Charge Trapping Layer

2004 ◽  
Vol 7 (9) ◽  
pp. G198 ◽  
Author(s):  
Y. N. Tan ◽  
W. K. Chim ◽  
B. J. Cho ◽  
W. K. Choi
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
High K
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