Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide

2014 ◽  
Vol 15 (4) ◽  
pp. 207-212 ◽  
Author(s):  
Teresa Oh ◽  
Chy Hyung Kim
Keyword(s):  
Zinc Oxide ◽  
Silicon Oxide ◽  
Defect Formation ◽  
Energy Gap ◽  
Carbon Doped ◽  
Doped Silicon

Atomic layer deposition of carbon doped silicon oxide by precursor design and process tuning

2018 ◽  
Vol 36 (2) ◽  
pp. 021509 ◽  
Author(s):  
Meiliang Wang ◽  
Haripin Chandra ◽  
Xinjian Lei ◽  
Anupama Mallikarjunan ◽  
Kirk Cuthill ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Carbon Doped ◽  
Layer Deposition ◽  
Doped Silicon

Intense blue–white luminescence from carbon-doped silicon-rich silicon oxide

2004 ◽  
Vol 84 (5) ◽  
pp. 717-719 ◽  
Author(s):  
Se-Young Seo ◽  
Kwan-Sik Cho ◽  
Jung H. Shin
Keyword(s):  
Silicon Oxide ◽  
Carbon Doped ◽  
Doped Silicon ◽  
White Luminescence

Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method

2003 ◽  
Vol 83 (3) ◽  
pp. 524-526 ◽  
Author(s):  
K. Y. Yiang ◽  
W. J. Yoo ◽  
Q. Guo ◽  
Ahila Krishnamoorthy
Keyword(s):  
Electrical Conduction ◽  
Silicon Oxide ◽  
Carbon Doped ◽  
Voltage Ramp ◽  
Doped Silicon

Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature

2006 ◽  
Author(s):  
Keisuke Yamaoka ◽  
Hideaki Kato ◽  
Daisuke Tsukiyama ◽  
Yuji Yoshizako ◽  
Yoshikazu Terai ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Stable ◽  
Stable Carbon ◽  
Carbon Doped ◽  
Doped Silicon

Investigation of low dielectric carbon-doped silicon oxide films prepared by PECVD using methyltrimethoxysilane precursor

2006 ◽  
Vol 506-507 ◽  
pp. 50-54 ◽  
Author(s):  
Chang Sil Yang ◽  
Young Hun Yu ◽  
Kwang-Man Lee ◽  
Heon-Ju Lee ◽  
Chi Kyu Choi
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

Low-Temperature Deposition of Amorphous Carbon Films for Surface Passivation of Carbon-Doped Silicon Oxide

2007 ◽  
Vol 26-28 ◽  
pp. 645-648 ◽  
Author(s):  
Keisuke Yamaoka ◽  
Yoshikazu Terai ◽  
Naomichi Okada ◽  
Takashi Yamaguchi ◽  
Yuji Yoshizako ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Carbon ◽  
Moisture Absorption ◽  
Surface Passivation ◽  
Silicon Oxide ◽  
Carbon Films ◽  
Rf Power ◽  
Temperature Plasma ◽  
Carbon Doped ◽  
Doped Silicon

Low-temperature plasma-enhanced chemical vapor deposition of amorphous carbon (a-C:H) films was investigated for surface passivation of carbon-doped silicon oxide (SiOCH) films. The a-C:H films were deposited using CH4 and Ar gases at 40–65°C. FT-IR results showed that the deposited films are a-C:H which incorporates hydrocarbon groups. In current−voltage measurements, the a-C:H showed a low leakage current of ~10–10 A/cm2 in air, indicating that the a-C:H films have a potential as a surface passivation layer to prevent moisture absorption in air. The insulating properties of room-temperature deposited SiOCH covered by the a-C:H strongly depended on radio frequency (RF) power in the SiOCH deposition. In the SiOCH film deposited at high RF power of 200 W, the resistivity in air was improved by the a-C:H passivation.

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