Investigation of low dielectric carbon-doped silicon oxide films prepared by PECVD using methyltrimethoxysilane precursor

2006 ◽  
Vol 506-507 ◽  
pp. 50-54 ◽  
Author(s):  
Chang Sil Yang ◽  
Young Hun Yu ◽  
Kwang-Man Lee ◽  
Heon-Ju Lee ◽  
Chi Kyu Choi
2006 ◽  
Vol 15 (1) ◽  
pp. 133-137 ◽  
Author(s):  
E. Rusli ◽  
M.R. Wang ◽  
T.K.S. Wong ◽  
M.B. Yu ◽  
C.Y. Li

2006 ◽  
Author(s):  
Keisuke Yamaoka ◽  
Hideaki Kato ◽  
Daisuke Tsukiyama ◽  
Yuji Yoshizako ◽  
Yoshikazu Terai ◽  
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2007 ◽  
Vol 46 (9A) ◽  
pp. 5970-5974 ◽  
Author(s):  
Nobuo Tajima ◽  
Takahisa Ohno ◽  
Tomoyuki Hamada ◽  
Katsumi Yoneda ◽  
Seiichi Kondo ◽  
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2001 ◽  
Vol 71 (2) ◽  
pp. 125-130 ◽  
Author(s):  
Shi-Jin Ding ◽  
Li Chen ◽  
Xin-Gong Wan ◽  
Peng-Fei Wang ◽  
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RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93219-93230 ◽  
Author(s):  
Srikar Rao Darmakkolla ◽  
Hoang Tran ◽  
Atul Gupta ◽  
Shankar B. Rananavare

A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).


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