Silicon Carbide Power Electronics for High-Temperature Power Conversion and Solid-State Circuit Protection in Aircraft Applications

2011 ◽  
Author(s):  
David Sheridan ◽  
Jeff Casady ◽  
Michael Mazzola ◽  
Robin Schrader ◽  
Volodymyr Bondarenko
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Solid State ◽  
Power Electronics ◽  
Power Conversion ◽  
Solid State Circuit

scholarly journals Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 406 ◽  
Author(s):  
Xiaorui Guo ◽  
Qian Xun ◽  
Zuxin Li ◽  
Shuxin Du
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Electronics ◽  
Junction Temperature ◽  
Significant Advance ◽  
Composition Material ◽  
Mems Devices ◽  
Excellent Thermal Stability ◽  
Packaging Technology ◽  
Gate Drives

The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

Solid State Sintering of SiC-Ceramics

2009 ◽  
Vol 624 ◽  
pp. 71-89 ◽  
Author(s):  
Koushik Biswas
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
High Temperature ◽  
Solid State ◽  
Grain Boundary ◽  
Hot Pressing ◽  
Amorphous Film ◽  
Structure Property ◽  
Secondary Phases ◽  
Sintering Aid

The most interesting feature in silicon carbide is the structure-property relation where the formation of different types of microstructure due to different structural modifications (polytypism) and grain-boundary/interfacial phase chemistry dictate the final properties of the monoliths. Since synthesis of SiC in last century, several methods such as hot pressing with a sintering aid (B, C), pressureless sintering with a sintering aid (B, C, Al) and reaction bonded (Si-SiC) were used to fabricate dense SiC. A newer method of fast sintering (spark plasma sintering) using pulsed current is also employed to consolidate nano/submicron size SiC with or without additives. The solid state sintered SiC materials have fine-grained equiaxed microstructure (grain size 1 to 4 µm) with thin layer of intergranular phases (amorphous film), exhibit moderate high-temperature creep and oxidation resistance, fracture toughness (3 to 4 MPam1/2) and have highly flaw-sensitive strength at room temperature. The high temperature mechanical properties are highly influenced by the presence of free C, Al and B + C containing grain-boundary phases. Moreover, during prolong processing, abnormal grain growth occurs resulting in anisotropic -SiC phase formation. The Si-SiC materials are poor candidates for high-temperature applications due to the limit set by the melting point of silicon, and the limitations of hot pressing (HPSiC) as a densification technique are well known. SPSed SiC without sintering additive revealed inferior mechanical properties attributed to poor bonding between adjacent grains. In the present survey, an overview of the new developments in silicon carbide processing and properties will be presented together with the information on structure-properties correlationship. Information on the structure of the grain-boundary/secondary phases and interfaces until now was not comprehensively analyzed.

scholarly journals Thermal Runaway Robustness of SiC VJFETs

2013 ◽  
Vol 740-742 ◽  
pp. 929-933 ◽  
Author(s):  
Rémy Ouaida ◽  
Cyril Buttay ◽  
Anhdung Hoang ◽  
Raphaël Riva ◽  
Dominique Bergogne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cooling System ◽  
Thermal Runaway ◽  
Temperature Capability ◽  
Junction Field Effect Transistors

Silicon Carbide (SiC) Junction-Field Effect Transistors (JFETs) are attractive devices for power electronics. Their high temperature capability should allow them to operate with a reduced cooling system. However, experiments described in this paper conclude to the existence of runaway conditions in which these transistors will reach destructive temperatures.

High-Efficiency Power Conversion Using Silicon Carbide Power Electronics

2014 ◽  
Vol 778-780 ◽  
pp. 1083-1088 ◽  
Author(s):  
H.P. Nee ◽  
J. Rabkowski ◽  
D. Peftitsis ◽  
G. Tolstoy ◽  
J. Colmenares ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
High Efficiency ◽  
Power Conversion ◽  
Power Transistors

The message of this paper is that the silicon carbide power transistors of today are good enough to design converters with efficiencies and switching speeds beyond comparison with corresponding technology in silicon. This is the time to act. Only in the highest power range the devices are missing. Another important step towards high powers is to find new solutions for multi-chip circuit designs that are adapted to the high possible switching speeds of unipolar silicon carbide power transistors.

Silicon Carbide Transistors for IC Design Applications up to 600 °C

2014 ◽  
Vol 778-780 ◽  
pp. 1126-1129 ◽  
Author(s):  
Ayden Maralani ◽  
Wei Cheng Lien ◽  
Nuo Zhang ◽  
A.P. Pisano
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Low Power ◽  
Power Electronics ◽  
High Power Density ◽  
Ic Design ◽  
Cooling Systems ◽  
Power Modules ◽  
Silicon Based

Low power Silicon Carbide (SiC) devices and Integrated Circuits (ICs) in conjunction with SiC or Aluminum Nitride (AlN) sensing elements will enable sensing functions in high temperature environments up to 600 °C where no silicon based devices or circuits have been able to survive in that temperature range. In power electronics applications, existence of low power SiC devices and IC technologies will significantly aid the development of high power density power modules in which total weights and cooling systems sizes are reduced. This paper will be evaluating the performances of the fabricated low power SiC device candidates (JFET and BJT) for SiC-based analog ICs design for high temperature and power electronics applications.

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