scholarly journals Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 406 ◽  
Author(s):  
Xiaorui Guo ◽  
Qian Xun ◽  
Zuxin Li ◽  
Shuxin Du
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Electronics ◽  
Junction Temperature ◽  
Significant Advance ◽  
Composition Material ◽  
Mems Devices ◽  
Excellent Thermal Stability ◽  
Packaging Technology ◽  
Gate Drives

The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

Low-Temperature Joining Technique as Interconnection Technology for Power Electronics

2011 ◽  
Vol 324 ◽  
pp. 437-440
Author(s):  
Raed Amro
Keyword(s):  
Low Temperature ◽  
Power Electronics ◽  
Life Time ◽  
Junction Temperature ◽  
Limiting Factors ◽  
Power Devices ◽  
Packaging Technology ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wires

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

History and Recent Developments of Packaging Technology for SiC Power Devices

2016 ◽  
Vol 858 ◽  
pp. 1043-1048 ◽  
Author(s):  
Karl Otto Dohnke ◽  
Karsten Guth ◽  
Nicolas Heuck
Keyword(s):  
Silicon Carbide ◽  
State Of The Art ◽  
Complex Structure ◽  
Junction Temperature ◽  
Power Device ◽  
Full Potential ◽  
Power Devices ◽  
Packaging Technology ◽  
Power Modules ◽  
Recent Developments

Packaging plays an important role to allow the full potential of silicon carbide devices to be realised. The physical properties of silicon carbide will allow devices to operate with junction temperatures well above 200 °C, but today standard-packaged SiC products are limited to a maximum junction temperature of 175 °C. The limitation lies in the packaging, because a power device package is a complex structure consisting of many components of different materials and with correspondingly different thermal properties. As such, the assembly technologies define both the performance and lifetime of discrete packages and power modules. In this paper we give an insight of packaging technology for SiC devices from the beginning in the mid-1980s through to the state-of-the-art of today. In addition, new packaging technologies to enable power SiC devices to operate up to 200 °C are discussed.

scholarly journals Thermal Runaway Robustness of SiC VJFETs

2013 ◽  
Vol 740-742 ◽  
pp. 929-933 ◽  
Author(s):  
Rémy Ouaida ◽  
Cyril Buttay ◽  
Anhdung Hoang ◽  
Raphaël Riva ◽  
Dominique Bergogne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cooling System ◽  
Thermal Runaway ◽  
Temperature Capability ◽  
Junction Field Effect Transistors

Silicon Carbide (SiC) Junction-Field Effect Transistors (JFETs) are attractive devices for power electronics. Their high temperature capability should allow them to operate with a reduced cooling system. However, experiments described in this paper conclude to the existence of runaway conditions in which these transistors will reach destructive temperatures.

Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices

2005 ◽  
Vol 483-485 ◽  
pp. 717-720
Author(s):  
Samir Zelmat ◽  
Marie Laure Locatelli ◽  
Thierry Lebey
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Dielectric Strength ◽  
Junction Temperature ◽  
Breakdown Field ◽  
Power Devices ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Different Temperatures

Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, highpower and high-temperature applications [1]. However, and among other issues, the production of advanced SiC power devices still remains limited due to some shortcomings of the dielectric properties of the passivation layer [2]. Due to their supposed high operating temperature and dielectric strength [3], spin coated polyimide materials appear as a possible candidates for SiC device passivation and insulation purposes. As a matter of fact, they are already used in current commercial SiC devices allowing a maximum junction temperature of 175 °C. The aim of this paper is to study the ability of polyimide (PI) coatings to be used for a Tjmax up to 300 °C. Therefore, the main electrical properties (dielectric permittivity, leakage current and breakdown field) at different temperatures of a high temperature commercially available polyimide material (from HD Microsystems) in both Metal-Insulator-Semiconductor (MIS) and Metal-Insulator-Metal (MIM) structures are presented and discussed.

Silicon Carbide Transistors for IC Design Applications up to 600 °C

2014 ◽  
Vol 778-780 ◽  
pp. 1126-1129 ◽  
Author(s):  
Ayden Maralani ◽  
Wei Cheng Lien ◽  
Nuo Zhang ◽  
A.P. Pisano
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Low Power ◽  
Power Electronics ◽  
High Power Density ◽  
Ic Design ◽  
Cooling Systems ◽  
Power Modules ◽  
Silicon Based

Low power Silicon Carbide (SiC) devices and Integrated Circuits (ICs) in conjunction with SiC or Aluminum Nitride (AlN) sensing elements will enable sensing functions in high temperature environments up to 600 °C where no silicon based devices or circuits have been able to survive in that temperature range. In power electronics applications, existence of low power SiC devices and IC technologies will significantly aid the development of high power density power modules in which total weights and cooling systems sizes are reduced. This paper will be evaluating the performances of the fabricated low power SiC device candidates (JFET and BJT) for SiC-based analog ICs design for high temperature and power electronics applications.

Extreme Service Packaging for Silicon Carbide Electronic Devices

2004 ◽  
Vol 815 ◽  
Author(s):  
Maxime J. F. Guinel ◽  
Diego Rodriguez-Marek ◽  
M. Grant Norton ◽  
Robert B. Davis ◽  
David F. Bahr
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Thermal Degradation ◽  
Single Crystal ◽  
Power Electronics ◽  
High Power ◽  
Electronic Devices ◽  
Good Choice ◽  
Harsh Environments ◽  
Single Crystal Sic

AbstractElectronic devices based on single crystal SiC represent a good choice for a variety of new high temperature, high power electronics applications. The challenge is to develop a package that is resistant to thermal degradation in harsh environments. Conditions are extreme and this all but rules out only a handful of materials and materials systems. Polycrystalline SiC is the material that we have chosen to study as a suitable package and materials suitability/compatibility has been considered on several levels.

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