scholarly journals The effective boron diffusion coefficient in Fe2B layers with the presence of chemical stresses

2012 ◽  
Vol 50 (02) ◽  
pp. 115-123 ◽  
Author(s):  
M. ORTIZ-DOMINGUEZ ◽  
I. CAMPOS-SILVA ◽  
G. ARES DE ◽  
J. MARTÍNEZ-TRINIDAD
Keyword(s):  
Diffusion Coefficient ◽  
Boron Diffusion

A Simple Kinetic Model for the Growth of Fe2B Layers on AISI 1026 Steel During the Powder-pack Boriding

2015 ◽  
Vol 34 (1) ◽  
pp. 1-11 ◽  
Author(s):  
M. A. Flores-Rentería ◽  
M. Ortiz-Domínguez ◽  
M. Keddam ◽  
O. Damián-Mejía ◽  
M. Elias-Espinosa ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Kinetic Model ◽  
Boron Diffusion ◽  
Simple Kinetic Model

AbstractThis work focused on the determination of boron diffusion coefficient through the Fe

Boron Diffusion in Polycrystalline Silicon

1986 ◽  
Vol 76 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Robert W. Dutton ◽  
Steven W. Novak
Keyword(s):  
Grain Size ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Boundary Diffusion ◽  
Crystalline Silicon ◽  
Unit Area ◽  
Grain Boundary Diffusion ◽  
Boron Diffusion

ABSTRACTThe diffusion of boron in ion implanted LPCVD polycrystalline silicon is shown to be dominated by grain boundary diffusion at low and moderate concentrations. The diffusion coefficient is 2 to 3 orders of magnitude larger than its value in crystalline silicon. In preannealed polysilicon, the boron diffusion coefficient is found to be 30% smaller than in polysilicon annealed after implantation. This reflects the effect of the grain size in the diffusion coefficient since preannealed polysilicon has larger grains and smaller density of grain boundaries per unit area.

Growth Kinetics of Boride Layers: A Modified Approach

2008 ◽  
Vol 272 ◽  
pp. 79-86 ◽  
Author(s):  
Ivan Campos-Silva ◽  
M. Ortíz-Domínguez ◽  
C. VillaVelázquez ◽  
R. Escobar ◽  
N. López
Keyword(s):  
Diffusion Coefficient ◽  
Boron Concentration ◽  
Treatment Temperature ◽  
Material Surface ◽  
Boride Phase ◽  
Boron Diffusion ◽  
Mass Balance Equation ◽  
Diffusion Controlled ◽  
Boriding Process ◽  
Kinetics Of

This study evaluates the boron diffusion in the Fe2B phase formed at the surface of AISI 1018 steels during the paste boriding process. The treatment was carried out at temperatures of 1123, 1173, 1223 and 1273 K with 2, 4, 5, 6 and 8 h exposure times for each temperature using a 4 mm layer thickness of boron carbide paste over the material surface. The boron diffusion coefficient Fe2B D was determined by the mass balance equation and the boride incubation time assuming that the boride layers obey the parabolic growth law, while the boron concentration profile along the interphase Fe2B/substrate was unknown. The boron diffusion coefficient was interpreted as a function of the treatment temperature, obtaining the activation energy value for diffusion controlled growth of Fe2B boride phase.

Boron diffusion into diamond under electric bias

1997 ◽  
Vol 12 (5) ◽  
pp. 1169-1171 ◽  
Author(s):  
T. Sung ◽  
G. Popovici ◽  
M. A. Prelas ◽  
R. G. Wilson ◽  
S. K. Loyalka
Keyword(s):  
Diffusion Coefficient ◽  
Electric Field ◽  
Drift Velocity ◽  
Boron Diffusion ◽  
Diamond Crystals ◽  
Natural Type ◽  
Forced Diffusion

Three natural type IIa diamond crystals were used for forced diffusion of boron. The diffusion was performed under bias otherwise with the same conditions. The boron diffusion coefficient in diamond was found to be 8.4 × 10−15 and 4 × 10−14 cm2/s at 1000 °C, depending on the direction of the electric field. The drift velocity of boron in diamond under 850 V at 1000 °C was found to be about 1.2 × 10−8 cm/s.

Concentration dependence of the boron diffusion coefficient in silicon

1983 ◽  
Vol 76 (1) ◽  
pp. K85-K88 ◽  
Author(s):  
Dao Khac An ◽  
Le Hoang Mai ◽  
Pham Hoi
Keyword(s):  
Diffusion Coefficient ◽  
Concentration Dependence ◽  
Boron Diffusion

Boron Diffusion Coefficient Increased by Phosphorus Diffusion

1974 ◽  
Vol 121 (10) ◽  
pp. 1377 ◽  
Author(s):  
H. Nakamura ◽  
S. Ohyama ◽  
C. Tadachi
Keyword(s):  
Diffusion Coefficient ◽  
Boron Diffusion ◽  
Phosphorus Diffusion

Brief-Measurements of Vapor Diffusion Coefficient

1954 ◽  
Vol 46 (11) ◽  
pp. 47-49 ◽  
Author(s):  
C.Y. Lee ◽  
C.R. Wilke
Keyword(s):  
Diffusion Coefficient ◽  
Vapor Diffusion
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