Transient behavior of boron diffusion coefficient in silicon in oxidizing ambient and extrinsic conditions: Influence of point defect recombination

1991 ◽  
Vol 70 (12) ◽  
pp. 7309-7314 ◽  
Author(s):  
Dimitris Tsoukalas
Keyword(s):  
Diffusion Coefficient ◽  
Point Defect ◽  
Transient Behavior ◽  
Boron Diffusion

scholarly journals The effective boron diffusion coefficient in Fe2B layers with the presence of chemical stresses

2012 ◽  
Vol 50 (02) ◽  
pp. 115-123 ◽  
Author(s):  
M. ORTIZ-DOMINGUEZ ◽  
I. CAMPOS-SILVA ◽  
G. ARES DE ◽  
J. MARTÍNEZ-TRINIDAD
Keyword(s):  
Diffusion Coefficient ◽  
Boron Diffusion

Application of High Energy Ion Beam on the Control of Boron Diffusion

2003 ◽  
Vol 792 ◽  
Author(s):  
Wei-Kan Chu ◽  
Lin Shao ◽  
Jiarui Liu
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Anomalous Diffusion ◽  
Ion Beam ◽  
Surface Region ◽  
High Energy ◽  
Boron Diffusion ◽  
Defect Engineering ◽  
Projected Range ◽  
Ultrashallow Junction

ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.

A Simple Kinetic Model for the Growth of Fe2B Layers on AISI 1026 Steel During the Powder-pack Boriding

2015 ◽  
Vol 34 (1) ◽  
pp. 1-11 ◽  
Author(s):  
M. A. Flores-Rentería ◽  
M. Ortiz-Domínguez ◽  
M. Keddam ◽  
O. Damián-Mejía ◽  
M. Elias-Espinosa ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Kinetic Model ◽  
Boron Diffusion ◽  
Simple Kinetic Model

AbstractThis work focused on the determination of boron diffusion coefficient through the Fe

Boron diffusion in silicon: the anomalies and control by point defect engineering

2003 ◽  
Vol 42 (3-4) ◽  
pp. 65-114 ◽  
Author(s):  
Lin Shao ◽  
Jiarui Liu ◽  
Quark Y. Chen ◽  
Wei-Kan Chu
Keyword(s):  
Point Defect ◽  
Boron Diffusion ◽  
Defect Engineering ◽  
And Control

Boron Diffusion in Polycrystalline Silicon

1986 ◽  
Vol 76 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Robert W. Dutton ◽  
Steven W. Novak
Keyword(s):  
Grain Size ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Boundary Diffusion ◽  
Crystalline Silicon ◽  
Unit Area ◽  
Grain Boundary Diffusion ◽  
Boron Diffusion

ABSTRACTThe diffusion of boron in ion implanted LPCVD polycrystalline silicon is shown to be dominated by grain boundary diffusion at low and moderate concentrations. The diffusion coefficient is 2 to 3 orders of magnitude larger than its value in crystalline silicon. In preannealed polysilicon, the boron diffusion coefficient is found to be 30% smaller than in polysilicon annealed after implantation. This reflects the effect of the grain size in the diffusion coefficient since preannealed polysilicon has larger grains and smaller density of grain boundaries per unit area.

Quantitative Measurement of Reduction of Phosphorus Diffusion by Substitutional Carbon Incorporation

1999 ◽  
Vol 568 ◽  
Author(s):  
M. S. Carroll ◽  
J. C. Sturm ◽  
C-L. Chang
Keyword(s):  
Point Defect ◽  
Active Regions ◽  
Absolute Number ◽  
Injection Rate ◽  
Complete Suppression ◽  
Boron Diffusion ◽  
Phosphorus Diffusion ◽  
Probe Point ◽  
Diffusion Enhancement ◽  
Boron Diffusivity

ABSTRACTComplete suppression of transient enhanced boron diffusion (TED) and oxidation enhanced boron diffusion (OED) in silicon have been achieved using substitutional carbon to reduce the excess point defect concentration in the dopant region [1]. Recent efforts have focused on removing the carbon from the active regions of the device [2,3] to avoid device degradation due to electrically active carbon defects [4] and exploring remote carbon's effect on boron TED and OED, while using the boron diffusion to probe point defect concentrations.In this paper we measure quantitatively the effect of remotely located carbon on phosphorus and boron diffusion above a buried SiGeC layer at 850°C in oxygen or nitrogen ambients. Remote carbon, located 1250 A below the phosphorus edge, is found to reduce the phosphorus diffusion enhancement factor due to OED from 8 to 2. The effect of the remotely located SiGeC buried layer on the excess interstitial concentration profile, which is responsible for the enhanced dopant diffusion, is probed by measuring boron and phosphorus diffusivites of in-situ doped boron and phosphorus layers above a buried SiGe(C) layer after oxidation or nitrogen anneals at 850°C. The enhanced boron diffusivity during oxidation is found to have a near linear dependence on depth ranging from 5–1.25. Finally, using x-ray diffraction and photoluminescence measurements of as-grown, buried, strained SiGe(C) structures and annealed SiGe(C) structures in oxygen or nitrogen ambient at 850°C the number of substitutional carbon atoms effectively consumed by oxidation is unambiguously correlated to the absolute number of injected interstitials using published values for the interstitial injection rate during oxidation [5].

Numerical Simulation Support for Diffusion Coefficient Measurements in Polycrystalline Thin Films

2011 ◽  
Vol 309-310 ◽  
pp. 63-72 ◽  
Author(s):  
Alain Portavoce ◽  
Ivan Blum ◽  
Lee Chow ◽  
Jean Bernardini ◽  
Dominique Mangelinck
Keyword(s):  
Thin Films ◽  
Diffusion Coefficient ◽  
Point Defect ◽  
Analytical Solutions ◽  
Initial Conditions ◽  
Matrix Composition ◽  
Computational Time ◽  
Process Conditions ◽  
Experimental Conditions ◽  
Nano Crystalline

The measurement of diffusion coefficients in today’s materials is complicated by the down scaling of the studied structures (nanometric effects in thin films, nano-crystalline layers, etc.) and by the complex production process conditions of industrial samples or structures (temperature variations, complex solute and point defect distributions, stress gradients, etc.). Often diffusion measurements have to be performed in samples for which initial experimental conditions do not offer the possibility of using conventional diffusion analytical solutions. Furthermore, phenomena involved with diffusion are sometimes so numerous and complex (stress, matrix composition inhomogeneities, time dependence of point defect generation sources, electrical effects, clustering effects, etc…) that the use of analytical solutions to solve the observed diffusion behavior is difficult. However, simulations can be of use in these cases. They are time consuming compared to the use of analytical solutions, but are more flexible regarding initial conditions and problem complexity. The use of simulations in order to model physical phenomena is quite common nowadays, and highly complex models have been developed. However, two types of simulations have to be considered: i) simulations aiming to understand and predict phenomena, and ii) simulations for measurement purposes, aiming to extract the (average) value of a physical parameter from experimental data. These two cases have different constrains. In the second case, that is the subject of this article, one of the most important stress is that the simulation has to precisely scale the experiment (sample size, experiment duration, etc.), sometimes preventing the measurement due to computational time consumption. Furthermore, the simpler the model (small number of parameters) used in the simulation, the more relevant the measurement (minimum error). In this paper, examples of recent works using two- and three-dimensional finite element simulations for diffusion coefficient measurements in thin polycrystalline films and nano-crystalline layers are presented. The possible use of simulations for diffusion coefficient measurements considering GB migration, GB segregation, or triple junctions is also discussed.

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