Boron Diffusion Coefficient Increased by Phosphorus Diffusion

1974 ◽  
Vol 121 (10) ◽  
pp. 1377 ◽  
Author(s):  
H. Nakamura ◽  
S. Ohyama ◽  
C. Tadachi
Keyword(s):  
Diffusion Coefficient ◽  
Boron Diffusion ◽  
Phosphorus Diffusion

scholarly journals The effective boron diffusion coefficient in Fe2B layers with the presence of chemical stresses

2012 ◽  
Vol 50 (02) ◽  
pp. 115-123 ◽  
Author(s):  
M. ORTIZ-DOMINGUEZ ◽  
I. CAMPOS-SILVA ◽  
G. ARES DE ◽  
J. MARTÍNEZ-TRINIDAD
Keyword(s):  
Diffusion Coefficient ◽  
Boron Diffusion

Phosphorus diffusion in silicon; influence of annealing conditions

2001 ◽  
Vol 669 ◽  
Author(s):  
J. S. Christensen ◽  
A. Yu. Kuznetsov ◽  
H. H. Radamson ◽  
B. G. Svensson
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficients ◽  
Activation Energies ◽  
Boron Diffusion ◽  
Diffusion Mode ◽  
Phosphorus Diffusion ◽  
Annealing Conditions ◽  
Boron Doped ◽  
Arrhenius Dependence ◽  
P Diffusion

ABSTRACTPhosphorus diffusion has been studied in both pure epitaxially grown silicon and Cz silicon, with a substantial amount of impurities like oxygen and carbon. Anneals have been performed in different atmospheres, N2 and dry O2, as well as in vacuum, at temperatures between 810 – 1100°C. Diffusion coefficients extracted from these anneals show no difference for the P diffusion in the epitaxially grown or the Cz silicon. The diffusion coefficients follow an Arrhenius dependence with the activation energy Ea=2.74±0.07 eV and a prefactor D0 = (8±5)×10−4 cm2/s. These parameters differ considerably from the previously reported and widely accepted values (3.66 eV and 3.84 cm2/s, respectively). However, vacuum anneals of the same samplesresult in values close to this 3.6 eV diffusion mode. Furthermore, control anneals of boron doped samples, with similar design as the phosphorus samples, suggest the same trend for boron diffusion in silicon – lower versus higher values of activation energies for nitrogen and vacuum anneals, respectively. These results are discussed in terms of the concentration of Si self-interstitials mediating the diffusion of phosphorus and boron.

A Simple Kinetic Model for the Growth of Fe2B Layers on AISI 1026 Steel During the Powder-pack Boriding

2015 ◽  
Vol 34 (1) ◽  
pp. 1-11 ◽  
Author(s):  
M. A. Flores-Rentería ◽  
M. Ortiz-Domínguez ◽  
M. Keddam ◽  
O. Damián-Mejía ◽  
M. Elias-Espinosa ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Kinetic Model ◽  
Boron Diffusion ◽  
Simple Kinetic Model

AbstractThis work focused on the determination of boron diffusion coefficient through the Fe

Boron Diffusion in Polycrystalline Silicon

1986 ◽  
Vol 76 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Robert W. Dutton ◽  
Steven W. Novak
Keyword(s):  
Grain Size ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Boundary Diffusion ◽  
Crystalline Silicon ◽  
Unit Area ◽  
Grain Boundary Diffusion ◽  
Boron Diffusion

ABSTRACTThe diffusion of boron in ion implanted LPCVD polycrystalline silicon is shown to be dominated by grain boundary diffusion at low and moderate concentrations. The diffusion coefficient is 2 to 3 orders of magnitude larger than its value in crystalline silicon. In preannealed polysilicon, the boron diffusion coefficient is found to be 30% smaller than in polysilicon annealed after implantation. This reflects the effect of the grain size in the diffusion coefficient since preannealed polysilicon has larger grains and smaller density of grain boundaries per unit area.

Quantitative Measurement of Reduction of Phosphorus Diffusion by Substitutional Carbon Incorporation

1999 ◽  
Vol 568 ◽  
Author(s):  
M. S. Carroll ◽  
J. C. Sturm ◽  
C-L. Chang
Keyword(s):  
Point Defect ◽  
Active Regions ◽  
Absolute Number ◽  
Injection Rate ◽  
Complete Suppression ◽  
Boron Diffusion ◽  
Phosphorus Diffusion ◽  
Probe Point ◽  
Diffusion Enhancement ◽  
Boron Diffusivity

ABSTRACTComplete suppression of transient enhanced boron diffusion (TED) and oxidation enhanced boron diffusion (OED) in silicon have been achieved using substitutional carbon to reduce the excess point defect concentration in the dopant region [1]. Recent efforts have focused on removing the carbon from the active regions of the device [2,3] to avoid device degradation due to electrically active carbon defects [4] and exploring remote carbon's effect on boron TED and OED, while using the boron diffusion to probe point defect concentrations.In this paper we measure quantitatively the effect of remotely located carbon on phosphorus and boron diffusion above a buried SiGeC layer at 850°C in oxygen or nitrogen ambients. Remote carbon, located 1250 A below the phosphorus edge, is found to reduce the phosphorus diffusion enhancement factor due to OED from 8 to 2. The effect of the remotely located SiGeC buried layer on the excess interstitial concentration profile, which is responsible for the enhanced dopant diffusion, is probed by measuring boron and phosphorus diffusivites of in-situ doped boron and phosphorus layers above a buried SiGe(C) layer after oxidation or nitrogen anneals at 850°C. The enhanced boron diffusivity during oxidation is found to have a near linear dependence on depth ranging from 5–1.25. Finally, using x-ray diffraction and photoluminescence measurements of as-grown, buried, strained SiGe(C) structures and annealed SiGe(C) structures in oxygen or nitrogen ambient at 850°C the number of substitutional carbon atoms effectively consumed by oxidation is unambiguously correlated to the absolute number of injected interstitials using published values for the interstitial injection rate during oxidation [5].

Growth Kinetics of Boride Layers: A Modified Approach

2008 ◽  
Vol 272 ◽  
pp. 79-86 ◽  
Author(s):  
Ivan Campos-Silva ◽  
M. Ortíz-Domínguez ◽  
C. VillaVelázquez ◽  
R. Escobar ◽  
N. López
Keyword(s):  
Diffusion Coefficient ◽  
Boron Concentration ◽  
Treatment Temperature ◽  
Material Surface ◽  
Boride Phase ◽  
Boron Diffusion ◽  
Mass Balance Equation ◽  
Diffusion Controlled ◽  
Boriding Process ◽  
Kinetics Of

This study evaluates the boron diffusion in the Fe2B phase formed at the surface of AISI 1018 steels during the paste boriding process. The treatment was carried out at temperatures of 1123, 1173, 1223 and 1273 K with 2, 4, 5, 6 and 8 h exposure times for each temperature using a 4 mm layer thickness of boron carbide paste over the material surface. The boron diffusion coefficient Fe2B D was determined by the mass balance equation and the boride incubation time assuming that the boride layers obey the parabolic growth law, while the boron concentration profile along the interphase Fe2B/substrate was unknown. The boron diffusion coefficient was interpreted as a function of the treatment temperature, obtaining the activation energy value for diffusion controlled growth of Fe2B boride phase.

Boron diffusion into diamond under electric bias

1997 ◽  
Vol 12 (5) ◽  
pp. 1169-1171 ◽  
Author(s):  
T. Sung ◽  
G. Popovici ◽  
M. A. Prelas ◽  
R. G. Wilson ◽  
S. K. Loyalka
Keyword(s):  
Diffusion Coefficient ◽  
Electric Field ◽  
Drift Velocity ◽  
Boron Diffusion ◽  
Diamond Crystals ◽  
Natural Type ◽  
Forced Diffusion

Three natural type IIa diamond crystals were used for forced diffusion of boron. The diffusion was performed under bias otherwise with the same conditions. The boron diffusion coefficient in diamond was found to be 8.4 × 10−15 and 4 × 10−14 cm2/s at 1000 °C, depending on the direction of the electric field. The drift velocity of boron in diamond under 850 V at 1000 °C was found to be about 1.2 × 10−8 cm/s.

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