Comparison of Gold and Copper Wire Bonding on Aluminum and Nickel-Palladium-Gold Bond Pads for Automotive Application

2012 ◽  
Vol 9 (2) ◽  
pp. 65-77 ◽  
Author(s):  
Tu Anh Tran ◽  
Varughese Mathew ◽  
Harold Downey
Keyword(s):  
Copper Wire ◽  
Chemical Properties ◽  
Automotive Application ◽  
Plastic Package ◽  
Copper Wire Bonding ◽  
Prolonged Duration ◽  
Environmental Requirements ◽  
Higher Temperature ◽  
Materials Used ◽  
Bond Pads

New automotive specifications derived from higher module integration and more stringent environmental requirements expect plastic packages to operate at higher junction temperatures with prolonged duration. Temperature is a key accelerating factor for failures in electronic package devices because of the thermo-mechanical, metallurgical and chemical properties of the materials used in the package. Failures in conventional plastic package at high temperatures such as 175 °C often originate from aluminum – gold wirebonding system because of the formation of Au-Al intermetallic phases and associated Kirkendall voiding which degrades the interface. Methods to overcome such reliability issues in wire bonded devices are to change either the wire material or the bond pad metallurgy or pad finishing other than aluminum which can reliably withstand operations at higher temperature and longer duration.

Nickel–palladium bond pads for copper wire bonding

2011 ◽  
Vol 51 (1) ◽  
pp. 75-80 ◽  
Author(s):  
Horst Clauberg ◽  
Petra Backus ◽  
Bob Chylak
Keyword(s):  
Copper Wire ◽  
Wire Bonding ◽  
Copper Wire Bonding ◽  
Bond Pads

Comparison of Gold and Copper Wire Bonding on Aluminum and Nickel-Palladium-Gold Bond Pads for Automotive Application

2011 ◽  
Vol 2011 (1) ◽  
pp. 000589-000599
Author(s):  
Tu Anh Tran ◽  
Varughese Mathew ◽  
Harold Downey
Keyword(s):  
High Temperature ◽  
Copper Wire ◽  
Low Cost ◽  
Electroless Nickel ◽  
Wire Bonding ◽  
Junction Temperature ◽  
Automotive Application ◽  
Plastic Packages ◽  
Wire Material ◽  
Bond Pads

New automotive requirements expect plastic packages to survive higher operating temperatures with extended thermal duration. Mission profiles for under-the-hood and transmission application historically specified minimal duration at maximum junction temperature, such as 50 total hours at 150C, while keeping most of the total operating duration at lower temperatures. Further module integration and more stringent environmental requirements push modules and thus plastic packages closer to the heat source. As such, new mission profiles include more than 3500 total hours at 150°C. To satisfy new automotive requirements, plastic packages must meet AEC Grade 0 or higher. One key limitation of the conventional plastic package is the use of gold bond wire on aluminum bond pad. Au-Al intermetallic degradation due to intermetallic transformation in high temperature storage condition remains the main reliability concern. More reliable intermetallic systems have been proposed that change the wire material and/or the bond pad metallization. An alternative wire material to gold, copper, has many benefits including low cost, high electrical and thermal conductivities and excellent reliability with aluminum pad metallization. Pad re-metallization using nickel/palladium, nickel/gold or nickel/palladium/gold over aluminum bond pad or copper bond pad offers a noble and reliable metal interconnect. This study focused on evaluating Au and Cu wire bonding on low-K-copper wafers having two types of bonding surfaces, the conventional aluminum pad and aluminum pad re-metallized with electroless nickel / electroless palladium / immersion gold. Ni thickness ranging from 1μm to 3μm was evaluated. Defects on as-plated Ni/Pd/Au bond pads such as color difference and surface roughness were determined to be due to nodule growth and plating non-uniformity. Wire bonded strip-level thermal aging was conducted to compare the high-temperature performance of the four interconnect types. Packages underwent extensive reliability stress conditions. Cross-sectioning through the ball bonds was also conducted to examine the welding region between the ball bond and bond pad. Defects in plating and wire bonding processes causing package reliability failures were identified. Recommendations for plating and wire bonding processes were derived to ensure high quality and reliable interconnect exceeding AEC grade 0 requirements.

Heavy copper wire-bonding on silicon chips with aluminum-passivated Cu bond-pads

2016 ◽  
Vol 156 ◽  
pp. 41-45 ◽  
Author(s):  
David Gross ◽  
Sabine Haag ◽  
Manfred Reinold ◽  
Martin Schneider-Ramelow ◽  
Klaus-Dieter Lang
Keyword(s):  
Copper Wire ◽  
Wire Bonding ◽  
Silicon Chips ◽  
Copper Wire Bonding ◽  
Bond Pads

Characterization of Over Pad Metallization (OPM) for High Temperature Reliability

2012 ◽  
Vol 2012 (1) ◽  
pp. 001097-001104
Author(s):  
Varughese Mathew ◽  
Tu Anh Tran
Keyword(s):  
High Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Properties ◽  
Thermal Reliability ◽  
Transmission Electron ◽  
Gold Ball ◽  
Materials Used ◽  
Bond Pads

Temperature is a key accelerating factor for failures in semiconductor devices which brings reliability challenges for electronic packaging process because of the thermo-mechanical, metallurgical and chemical properties of the materials used in packaging. Failures at high temperatures (≥ 175 °C) often originate from aluminum – gold wirebonding systems because of the formation of Au-Al intermetallic phases and associated Kirkendall voiding which degrade the interface. A stack of Nickel/Palladium /Gold (Over Pad Metallization or OPM) formed on aluminum or copper bond pads are reported to be reliable pad finishing for high temperature applications. In this study OPM stack is formed by electroless plating on aluminum bond pads separated by 10 μm or more and the process is optimized to achieve high process yields. Al bond pad contamination is shown to be an important factor for achieving good plating quality and yield. Various plating defects which can lead to electrical failures are characterized. It is shown that defective rough plating can lead to wirebonding failures such as non-stick on pads (NSOP). Interface of gold ball bond and OPM after thermal aging at 225 °C for 168 hours is characterized by High Resolution Transmission Electron Microscopy (TEM) and Focused ion beam (FIB) cross-section analysis. Excellent thermal reliability with no degradation of ball shear or wire pull strengths achieved with non-defective OPM pads. High temperature (175 °C) package reliability with OPM is demonstrated for gold and copper wires.

Next Generation Nickel-Based Bond Pads Enable Copper Wire Bonding

2019 ◽  
Vol 18 (1) ◽  
pp. 777-785 ◽  
Author(s):  
Bob Chylak ◽  
Jamin Ling ◽  
Horst Clauberg ◽  
Tom Thieme
Keyword(s):  
Copper Wire ◽  
Wire Bonding ◽  
Next Generation ◽  
Copper Wire Bonding ◽  
Bond Pads

Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

2011 ◽  
Author(s):  
Huixian Wu ◽  
Arthur Chiang ◽  
David Le ◽  
Win Pratchayakun
Keyword(s):  
Failure Analysis ◽  
Copper Wire ◽  
New Technology ◽  
Analytical Techniques ◽  
Wire Bonding ◽  
Bonding Process ◽  
Wire Bonds ◽  
Copper Wire Bonding ◽  
Wet Chemical ◽  
Microelectronic Components

Abstract With gold prices steadily going up in recent years, copper wire has gained popularity as a means to reduce cost of manufacturing microelectronic components. Performance tradeoff aside, there is an urgent need to thoroughly study the new technology to allay any fear of reliability compromise. Evaluation and optimization of copper wire bonding process is critical. In this paper, novel failure analysis and analytical techniques are applied to the evaluation of copper wire bonding process. Several FA/analytical techniques and FA procedures will be discussed in detail, including novel laser/chemical/plasma decapsulation, FIB, wet chemical etching, reactive ion etching (RIE), cross-section, CSAM, SEM, EDS, and a combination of these techniques. Two case studies will be given to demonstrate the use of these techniques in copper wire bonded devices.

Micro-Ribbons and Micro-Wires Silica Synthesis Using Bottom-Top Technique

2020 ◽  
Vol 1008 ◽  
pp. 33-38
Author(s):  
Marwa Nabil ◽  
Hussien A. Motaweh
Keyword(s):  
Selection Process ◽  
Chemical Properties ◽  
Industrial Applications ◽  
Preparation Process ◽  
Pure Silica ◽  
One Step ◽  
Materials Used ◽  
Sonication Technique ◽  
Silica Synthesis ◽  
Physical And Chemical

Silica is one of the most important materials used in many industries. The basic factor on which the selection process depends is the structural form, which is dependent on the various physical and chemical properties. One of the common methods in preparing pure silica is that it needs more than one stage to ensure the preparation process completion. The goal of this research is studying the nucleation technique (Bottom-top) for micro-wires and micro-ribbons silica synthesis. The silica nanoand microstructures are prepared using a duality (one step); a combination of alkali chemical etching process {potassium hydroxide (3 wt %) and n-propanol (30 Vol %)} and the ultra-sonication technique. In addition, the used materials in the preparation process are environmentally friendly materials that produce no harmful residues. The powder product is characterized using XRD, FTIR, Raman spectrum and SEM for determining the shape of architectures. The most significant factor of the nucleation mechanism is the sonication time of silica powder production during the dual technique. The product stages are as follows; silica nanoparticles (21-38 nm), nanoclusters silica (46 – 67 nm), micro-wires silica (1.17 – 6.29 μm), and micro-ribbons silica (19.4 – 54.1 μm). It's allowing for use in environmental applications (multiple wastewater purification, multiple uses in air filters, as well as many industrial applications).

scholarly journals Development of high reliability semiconductor devices by copper wire bonding.

1988 ◽  
Vol 27 (4) ◽  
pp. 299-301
Author(s):  
J. Hirota ◽  
Y. Shibutani ◽  
T. Sugimura ◽  
K. Machida ◽  
T. Okuda
Keyword(s):  
High Reliability ◽  
Copper Wire ◽  
Semiconductor Devices ◽  
Wire Bonding ◽  
Copper Wire Bonding
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